SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3114B is N-channel MOS FET device that features a low

gate charge and excellent switching characteristics, and designed

for high voltage applications such as switching power supply, AC

adapter.

FEATURES

• Low on-state resistance

RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A)

• Low gate charge

QG = 13.6 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)

• Gate voltage rating : ±30 V

• Avalanche capability ratings

• Isolated TO-220 package