SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3114 is N-channel DMOS FET device that features a

low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

FEATURES

• Low on-state resistance:

RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A)

• Low gate charge:

QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)

•Gate voltage rating: ±30 V

• Avalanche capability ratings

• Isolated TO-220 package