位置：首页 > IC中文资料 > 2SK3113B-S15-AY
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3113B-S15-AY | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A) | NEC 瑞萨 |   | |
2SK3113B-S15-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o | RENESAS 瑞萨 | | |
2SK3113B-S15-AY | SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
17+ |
10 |
TO-251 |
|||
Renesas |
1335+ |
TO252-2 |
2300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
11+PBF |
TO-252 |
2100 |
现货 |
|||
NEC |
N/L |
TO-251 |
631240 |
只做原装持续供应!! |
|||
RENESAS/瑞萨 |
24+ |
TO-251 |
60000 |
||||
NEC |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
4150 |
原装现货,当天可交货,原型号开票 |
|||
NEC CORPORATION |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
25+ |
TO-251 |
30000 |
代理全新原装现货,价格优势 |
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2SK3113B-S15-AY规格书下载地址
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2SK3113B-S15-AY数据表相关新闻
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属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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