The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

1. Low on-state resistance: RDS(on)= 2.2 ΩMAX. (VGS= 10 V, ID= 2.0 A)

2. Low gate charge:

QG = 15 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 4.0 A)

3. Gate voltage rating: ±30 V

4. Avalanche capability ratings

5. Isolated TO-220 package