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2SD11晶体管资料
2SD11别名：2SD11三极管、2SD11晶体管、2SD11晶体三极管
2SD11生产厂家：日本日电公司
2SD11制作材料：Ge-NPN
2SD11性质：开关管 （S）
2SD11封装形式：直插封装
2SD11极限工作电压：25V
2SD11最大电流允许值：0.3A
2SD11最大工作频率：2.5MHZ
2SD11引脚数：3
2SD11最大耗散功率：0.15W
2SD11放大倍数：
2SD11图片代号：C-65
2SD11vtest：25
2SD11htest：2500000
- 2SD11atest：0.3
2SD11wtest：0.15
2SD11代换 2SD11用什么型号代替：ASY28,ASY29,ASY73,ASY74,ASY75,2N1302,3BX81B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation-: PC= 100W@TC= 25℃ ·High Current Capability-: IC= 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. | ISC 无锡固电 |   | ||
Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Features ● Low Frequency amplifier. | KEXIN 科信电子 | | ||
Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 | RENESAS 瑞萨 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability APPLICATIONS ·Designed for high power AF amplifier applications. | ISC 无锡固电 | | ||
SI NPN DIFFUSED JUNCTION MESA DARLINGTON 2SD1044 -> Si NPN Diffused junction Mesa Darlington 2SD1091 -> Si NPN Triple Diffused Planar Darlington 2SD1105 -> Si NPN Diffused junction Mesa | Panasonic 松下 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • High Power Dissipation- : PC= 100W@TC= 25℃ • High Current Capability- : IC = 10A APPLICATIONS • Designed for power amplifier , power switching ,DC-DC converter and regulator applications. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Complement to Type 2SB849 APPLICATIONS • Designed for audio frequency power amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SB849 • Wide area of safe operation APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | | ||
Driver Applications · High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage (V CE(sat)=0.8V typ). | SANYO 三洋 | | ||
Silicon NPN Triple Diffused Application Igniter | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Triple Diffused Application Igniter | RENESAS 瑞萨 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) • High DC Current Gain : hFE= 500(Min) @IC= 4A APPLICATIONS • Igniter | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Application Igniter | RENESAS 瑞萨 | | ||
Silicon NPN Triple Diffused Application Igniter | HitachiHitachi Semiconductor 日立日立公司 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 300V(Min) ·High DC Current Gain: hFE= 500(Min)@IC= 2A APPLICATIONS ·Designed for high voltage switching, igniter applications. | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Application High voltage switching, igniter | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Application High voltage switching, igniter | HitachiHitachi Semiconductor 日立日立公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A • Wide Area of Safe Operation • Complement to Type 2SB850 APPLICATIONS • Designed for audio amplifier, series regulators and general purpose power | ISC 无锡固电 | | ||
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Features ● High speed switching ● High D.C current gain ● Low saturation voltage ● High reliability Applications ● Switching regulators ● DC-DC converter ● Solid state relay ● General purpose power amplifier | Fuji 富士通 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min) ·High DC Current Gain-: hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power am | ISC 无锡固电 | | ||
Silicon NPN epitaxial planar type Features ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the lowvoltage power supply. | KEXIN 科信电子 | | ||
TRANSISTOR (NPN) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply. | HTSEMI 金誉半导体 | | ||
Silicon NPN epitaxial planer type(For low-frequency power amplification0 Silicon NPN epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply. ● Mini type package, allowing downsizing of the equipment an | Panasonic 松下 | | ||
SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply. | JIANGSU 长电科技 | | ||
Silicon NPN transistor in a SOT-89 Plastic Package Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low VCE(sat),High performance at low supply voltage. Applications AF Power amplifier. | FOSHAN 蓝箭电子 | | ||
Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low voltage power supply. | HOTTECH 合科泰 | | ||
Silicon NPN epitaxial planar type FEATURES ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply. | BILIN 银河微电 | | ||
SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the low voltage power supply. | DGNJDZ 南晶电子 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 5A • Low Saturation Voltage APPLICATIONS • Designed for power switching applications. | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Silicon NPN Triple Diffused Application Power switching | RENESAS 瑞萨 | | ||
Silicon NPN Triple Diffused Silicon NPN Triple Diffused Application Power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Triple Diffused Silicon NPN Triple Diffused Application Power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Triple Diffused Silicon NPN Triple Diffused Application Power switching | RENESAS 瑞萨 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. | ISC 无锡固电 | | ||
SILICON NPN TRIPLE DIFFUSED POWER SWITCHING Coming Soon. If you have some information on related parts, please share useful information by adding links below. | HitachiHitachi Semiconductor 日立日立公司 | | ||
High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS | WINGS 永盛电子 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·Audio power amplifier, power switching applications. ·DC-DC converter and regulator applications. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 APPLICATIONS ·Designed for low frequency power amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications | SAVANTIC | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB858 APPLICATIONS ·Designed for low frequency power amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 | RENESAS 瑞萨 | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 | RENESAS 瑞萨 | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB859 | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications | SAVANTIC | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB859 | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications | ISC 无锡固电 | | ||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SB860 APPLICATIONS • Low frequency power amplifier TV vertical deflection output applications | ISC 无锡固电 | |
2SD11产品属性
- 类型
描述
- 型号
2SD11
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 130V 10A 100W BEC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
4580 |
原装现货,当天可交货,原型号开票 |
|||
PANASONIC/松下 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
PANASONIC/松下 |
25+ |
SOT-23 |
20300 |
PANASONIC/松下原装特价2SD1149即刻询购立享优惠#长期有货 |
|||
PANASONIC |
23+ |
SOT23 |
14500 |
原厂原装正品 |
|||
PANASONIC/松下 |
新年份 |
Mini3-G3-B |
34300 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
PANASONIC/松下 |
25+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
PANASONIC |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Panasonic |
25+23+ |
Sot-23 |
30298 |
绝对原装正品全新进口深圳现货 |
|||
PANASONIC/松下 |
22+ |
SOT-23 |
8000 |
原装正品支持实单 |
2SD11芯片相关品牌
2SD11规格书下载地址
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2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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