2SD113晶体管资料

  • 2SD113别名:2SD113三极管、2SD113晶体管、2SD113晶体三极管

  • 2SD113生产厂家:日本东芝公司

  • 2SD113制作材料:Si-NPN

  • 2SD113性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD113封装形式:直插封装

  • 2SD113极限工作电压:100V

  • 2SD113最大电流允许值:30A

  • 2SD113最大工作频率:1.5MHZ

  • 2SD113引脚数:2

  • 2SD113最大耗散功率:200W

  • 2SD113放大倍数

  • 2SD113图片代号:E-44

  • 2SD113vtest:100

  • 2SD113htest:1500000

  • 2SD113atest:30

  • 2SD113wtest:200

  • 2SD113代换 2SD113用什么型号代替:BDW30,BDY29,BDY57,MJ802,2N6249,2N6259,2N6322,2SD797,3DD73D,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD113

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·Audio power amplifier, power switching applications. ·DC-DC converter and regulator applications.

ISC

无锡固电

2SD113

SI NPN POWER BJT, I(C) = 20 A TO 49.9 A

文件:94.18 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SD113

SILICON NPN DEFFUSED JUNCTION TRANSISTOR

文件:51 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SD113

SI NPN POWER BJT, I(C) = 20 A TO 49.9 A

ETC

知名厂家

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB858 APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB859

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB859

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications

ISC

无锡固电

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Triple Diffused

Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB860 APPLICATIONS • Low frequency power amplifier TV vertical deflection output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB860 APPLICATIONS • Low frequency power amplifier TV vertical deflection output applications

SAVANTIC

Silicon NPN Triple Diffused

Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860

RENESAS

瑞萨

Silicon NPN Triple Diffused

Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861

RENESAS

瑞萨

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output

ISC

无锡固电

Silicon NPN Triple Diffused

Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

· With TO-220C package · Complement to type 2SB861 ·Low frequency high voltage power amplifier TV vertical deflection output

SAVANTIC

TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Color TV Vertical Deflection Output

DGNJDZ

南晶电子

Silicon NPN Power Transistors

文件:127.81 Kbytes Page:4 Pages

SAVANTIC

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-220AB

ETC

知名厂家

Silicon NPN Power Transistors

文件:138.98 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:94.15 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:92.55 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:65 Kbytes Page:3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:134.55 Kbytes Page:5 Pages

SAVANTIC

TO-220-3L Plastic-Encapsulate Transistors

文件:771.47 Kbytes Page:3 Pages

JIANGSU

长电科技

Silicon NPN Power Transistors

文件:132.82 Kbytes Page:4 Pages

SAVANTIC

NPN Silicon Power Transistors

文件:369.91 Kbytes Page:2 Pages

MCC

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 150V 2A TO220AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Silicon Power Transistors

文件:369.91 Kbytes Page:2 Pages

MCC

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 150V 2A TO220AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

Silicon NPN Power Transistor

文件:257.66 Kbytes Page:2 Pages

ISC

无锡固电

2SD113产品属性

  • 类型

    描述

  • 型号

    2SD113

  • 功能描述

    SILICON NPN DEFFUSED JUNCTION TRANSISTOR

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
3439
原装现货,当天可交货,原型号开票
24+
TO-3
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
HITACHI/日立
25+
TO-220
45000
HITACHI/日立全新现货2SD1136即刻询购立享优惠#长期有排单订
日立
23+
TO-220
4500
绝对全新原装!优势供货渠道!特价!请放心订购!
sanyo
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
HITACH
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA
23+
SMD
120000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ROHM
NEW
SOT89
11092
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
HITACH
25+
NA
880000
明嘉莱只做原装正品现货
RENESAS
原厂封装
9800
原装进口公司现货假一赔百

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