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2SD113晶体管资料

  • 2SD113别名:2SD113三极管、2SD113晶体管、2SD113晶体三极管

  • 2SD113生产厂家:日本东芝公司

  • 2SD113制作材料:Si-NPN

  • 2SD113性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD113封装形式:直插封装

  • 2SD113极限工作电压:100V

  • 2SD113最大电流允许值:30A

  • 2SD113最大工作频率:1.5MHZ

  • 2SD113引脚数:2

  • 2SD113最大耗散功率:200W

  • 2SD113放大倍数

  • 2SD113图片代号:E-44

  • 2SD113vtest:100

  • 2SD113htest:1500000

  • 2SD113atest:30

  • 2SD113wtest:200

  • 2SD113代换 2SD113用什么型号代替:BDW30,BDY29,BDY57,MJ802,2N6249,2N6259,2N6322,2SD797,3DD73D,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD113

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·Audio power amplifier, power switching applications. ·DC-DC converter and regulator applications.

ISC

无锡固电

2SD113

SI NPN POWER BJT, I(C) = 20 A TO 49.9 A

文件:94.18 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SD113

SILICON NPN DEFFUSED JUNCTION TRANSISTOR

文件:51 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SD113

SI NPN POWER BJT, I(C) = 20 A TO 49.9 A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印代码:2SD1138;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Color TV Vertical Deflection Output

DGNJDZ

南晶电子

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

HITACHIHitachi Semiconductor

日立日立公司

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB858 APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB859

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB859

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications

ISC

无锡固电

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Triple Diffused

Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB860 APPLICATIONS • Low frequency power amplifier TV vertical deflection output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB860 APPLICATIONS • Low frequency power amplifier TV vertical deflection output applications

SAVANTIC

Silicon NPN Power Transistors

· With TO-220C package · Complement to type 2SB861 ·Low frequency high voltage power amplifier TV vertical deflection output

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output

ISC

无锡固电

Silicon NPN Triple Diffused

Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861

HITACHIHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Triple Diffused

Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861

RENESAS

瑞萨

Silicon NPN Power Transistors

文件:127.81 Kbytes Page:4 Pages

SAVANTIC

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:138.98 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:92.55 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:65 Kbytes Page:3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:94.15 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:134.55 Kbytes Page:5 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:132.82 Kbytes Page:4 Pages

SAVANTIC

TO-220-3L Plastic-Encapsulate Transistors

文件:771.47 Kbytes Page:3 Pages

JIANGSU

长电科技

NPN Silicon Power Transistors

文件:369.91 Kbytes Page:2 Pages

MCC

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 150V 2A TO220AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Silicon Power Transistors

文件:369.91 Kbytes Page:2 Pages

MCC

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 150V 2A TO220AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

Silicon NPN Power Transistor

文件:257.66 Kbytes Page:2 Pages

ISC

无锡固电

2SD113产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    70V

  • Maximum Collector Emitter Saturation Voltage:

    1@0.2A@2AV

  • Maximum Collector Emitter Voltage:

    50V

  • Maximum DC Collector Current:

    4A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    40000mW

  • Maximum Transition Frequency:

    7(Typ)MHz

  • Type:

    NPN

更新时间:2026-7-22 22:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
25+
TO-220
45000
HITACHI/日立全新现货2SD1136即刻询购立享优惠#长期有排单订
MOSPEC
2450+
TO-220
6885
只做原装正品假一赔十为客户做到零风险!!
RENESAS
24+
TO-220
16900
原装正品现货支持实单
RENESAS
26+
TO-220
360000
进口原装现货
ROHM
26+
SOT89
11092
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
CJ/长电
21+
TO-220-3L
30000
百域芯优势 实单必成 可开13点增值税发票
HITACH
25+
NA
880000
明嘉莱只做原装正品现货
RENESAS
25+
NA
1420
专做原装正品,假一罚百!
长电
25+23+
TO-220-3L
24015
绝对原装正品全新进口深圳现货
TOSHIBA
24+
SMD
36500
一级代理/放心采购

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