2SD111晶体管资料

  • 2SD111别名:2SD111三极管、2SD111晶体管、2SD111晶体三极管

  • 2SD111生产厂家:日本东芝公司

  • 2SD111制作材料:Ge-NPN

  • 2SD111性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD111封装形式:直插封装

  • 2SD111极限工作电压:100V

  • 2SD111最大电流允许值:10A

  • 2SD111最大工作频率:1MHZ

  • 2SD111引脚数:2

  • 2SD111最大耗散功率:100W

  • 2SD111放大倍数

  • 2SD111图片代号:E-44

  • 2SD111vtest:100

  • 2SD111htest:1000000

  • 2SD111atest:10

  • 2SD111wtest:100

  • 2SD111代换 2SD111用什么型号代替:BD130,BD317,BDW21C,BDX0,BDY20,BDY39,BDY53,2N3055,2N5632,2N5633,3DD70D,

型号 功能描述 生产厂家&企业 LOGO 操作
2SD111

iscSiliconNPNPowerTransistor

DESCRIPTION •HighPowerDissipation- :PC=100W@TC=25℃ •HighCurrentCapability- :IC=10A APPLICATIONS •Designedforpoweramplifier,powerswitching,DC-DC converterandregulatorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •GoodLinearityofhFE •ComplementtoType2SB849 APPLICATIONS •Designedforaudiofrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SB849 •Wideareaofsafeoperation APPLICATIONS •Foruseinlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

DriverApplications

·HighDCCurrentGain(5000orgreater). ·LargecurrentcapacityandwideASO. ·Lowsaturationvoltage(VCE(sat)=0.8Vtyp).

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNTripleDiffused

Application Igniter

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNTripleDiffused

Application Igniter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage- :VCEO(SUS)=300V(Min) •HighDCCurrentGain :hFE=500(Min)@IC=4A APPLICATIONS •Igniter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNTripleDiffused

Application Igniter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNTripleDiffused

Application Igniter

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNTripleDiffused

Application Highvoltageswitching,igniter

HitachiHitachi, Ltd.

日立公司

Hitachi

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) ·HighDCCurrentGain:hFE=500(Min)@IC=2A APPLICATIONS ·Designedforhighvoltageswitching,igniterapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·DARLINGTON APPLICATIONS ·Forhighvoltageswitchingandignitorapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNTripleDiffused

Application Highvoltageswitching,igniter

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·DARLINGTON APPLICATIONS ·Forhighvoltageswitchingandignitorapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=40V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=1.2V(Max)@IC=5A •WideAreaofSafeOperation •ComplementtoType2SB850 APPLICATIONS •Designedforaudioamplifier,seriesregulatorsandgeneralpurposepower

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TRIPLEDIFFUSEDPLANERTYPEHIGHSPEEDSWITCHING

Features ●Highspeedswitching ●HighD.Ccurrentgain ●Lowsaturationvoltage ●Highreliability Applications ●Switchingregulators ●DC-DCconverter ●Solidstaterelay ●Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) ·HighDCCurrentGain-:hFE=300V(Min.)@IC=1A ·LowCollectorSaturationVoltage ·HighReliability APPLICATIONS ·Switchingregulators ·DC-DCconverter ·Solidsaterelay ·Generalpurposepoweram

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TRANSISTOR(NPN)

FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat) ●Satisfactoryoperationperformancesathighefficiencywiththelow voltagepowersupply.

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

SiliconNPNepitaxialplanertype(Forlow-frequencypoweramplification0

SiliconNPNepitaxialplanertype Forlow-frequencypoweramplification ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●Satisfactoryoperationperformancesathighefficiencywiththelow-voltagepowersupply. ●Minitypepackage,allowingdownsizingoftheequipmentan

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNepitaxialplanartype

Features ●Lowcollector-emittersaturationvoltageVCE(sat). ●Satisfactoryoperationperformancesathighefficiencywith thelowvoltagepowersupply.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcollector-emittersaturationvoltageVCE(sat) Satisfactoryoperationperformancesathighefficiencywiththelow voltagepowersupply.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconNPNepitaxialplanartype

FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat). ●Satisfactoryoperationperformancesat highefficiencywiththelow-voltagepowersupply.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat) ●Satisfactoryoperationperformancesathighefficiencywiththelow voltagepowersupply.

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),Highperformanceatlowsupplyvoltage. Applications AFPoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

Plastic-EncapsulateTransistors

FEATURES •Lowcollector-emittersaturationvoltageVCE(sat) •Satisfactoryoperationperformancesathighefficiency withthelowvoltagepowersupply.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

SiliconNPNPowerTransistors

文件:136.57 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNDarlingtonPowerTransistor

文件:329.85 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

文件:99.33 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNTransistors

文件:391.17 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 25V 3A MINIP3-F1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Panasonic Electronic Components

Panasonic Electronic Components

Panasonic Electronic Components

封装/外壳:TO-243AA 包装:散装 描述:TRANS NPN 25V 3A MINIP3-F2 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Panasonic Electronic Components

Panasonic Electronic Components

Panasonic Electronic Components

NPNTransistors

文件:408.63 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

文件:391.17 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

文件:408.63 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

文件:391.17 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

文件:408.63 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2SD111产品属性

  • 类型

    描述

  • 型号

    2SD111

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 100V 10A 100W BEC

更新时间:2024-3-29 9:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC
22+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
NEC
22+
TO-3P
7992
原装现货
PANASONIC/松下
22+
SOT89
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
23+
N/A
59210
正品授权货源可靠
PANASONIC
17+
SOT89
9988
只做原装进口,自己库存
SIPUSEMI
2021+
SOT-89
9000
原装现货,随时欢迎询价
PANASONIC
05+
SOT89
2255
全新原装进口自己库存优势
PANASONIC/松下
22+
34300
CDIL
2021+
TO3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
SANYO/三洋
21+
65230

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2SD111数据表相关新闻