isc Silicon NPN Power Transistor

DESCRIPTION • High Power Dissipation- : PC= 100W@TC= 25℃ • High Current Capability- : IC = 10A APPLICATIONS • Designed for power amplifier , power switching ,DC-DC converter and regulator applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Complement to Type 2SB849 APPLICATIONS • Designed for audio frequency power amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SB849 • Wide area of safe operation APPLICATIONS • For use in low frequency power amplifier applications

Driver Applications

· High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage (V CE(sat)=0.8V typ).

Silicon NPN Triple Diffused

Application Igniter

Silicon NPN Triple Diffused

Application Igniter

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) • High DC Current Gain : hFE= 500(Min) @IC= 4A APPLICATIONS • Igniter

Silicon NPN Triple Diffused

Application Igniter

Silicon NPN Triple Diffused

Application Igniter

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 300V(Min) ·High DC Current Gain: hFE= 500(Min)@IC= 2A APPLICATIONS ·Designed for high voltage switching, igniter applications.

Silicon NPN Triple Diffused

Application High voltage switching, igniter

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications

Silicon NPN Triple Diffused

Application High voltage switching, igniter

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A • Wide Area of Safe Operation • Complement to Type 2SB850 APPLICATIONS • Designed for audio amplifier, series regulators and general purpose power

TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING

Features ● High speed switching ● High D.C current gain ● Low saturation voltage ● High reliability Applications ● Switching regulators ● DC-DC converter ● Solid state relay ● General purpose power amplifier

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min) ·High DC Current Gain-: hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power am

TRANSISTOR (NPN)

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply.

Silicon NPN epitaxial planer type(For low-frequency power amplification0

Silicon NPN epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply. ● Mini type package, allowing downsizing of the equipment an

Silicon NPN epitaxial planar type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the lowvoltage power supply.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply.

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low VCE(sat),High performance at low supply voltage. Applications AF Power amplifier.

Plastic-Encapsulate Transistors

FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low voltage power supply.

Silicon NPN epitaxial planar type

FEATURES ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply.

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the low voltage power supply.

Silicon NPN Power Transistors

文件：136.57 Kbytes Page：3 Pages

Trans Darlington NPN 300V 6A 3-Pin(3+Tab) TO-220AB

Silicon NPN Triple Diffused

isc Silicon NPN Darlington Power Transistor

文件：329.85 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：99.33 Kbytes Page：3 Pages

TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING

NPN Transistors

文件：391.17 Kbytes Page：1 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 25V 3A MINIP3-F1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 25V 3A MINIP3-F2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Transistors

文件：408.63 Kbytes Page：1 Pages

NPN Transistors

文件：391.17 Kbytes Page：1 Pages

NPN Transistors

文件：408.63 Kbytes Page：1 Pages

NPN Transistors

文件：391.17 Kbytes Page：1 Pages

NPN Transistors

文件：408.63 Kbytes Page：1 Pages