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2SC358晶体管资料
2SC3580别名:2SC3580三极管、2SC3580晶体管、2SC3580晶体三极管
2SC3580生产厂家:日本三菱公司
2SC3580制作材料:Si-NPN
2SC3580性质:低频或音频放大 (LF)_TR_输出极 (E)
2SC3580封装形式:直插封装
2SC3580极限工作电压:25V
2SC3580最大电流允许值:0.7A
2SC3580最大工作频率:180MHZ
2SC3580引脚数:3
2SC3580最大耗散功率:0.9W
2SC3580放大倍数:
2SC3580图片代号:A-20
2SC3580vtest:25
2SC3580htest:180000000
- 2SC3580atest:.7
2SC3580wtest:.9
2SC3580代换 2SC3580用什么型号代替:BC337,BC338,2SC1383,2SC2060,2SC2236,2SC2703,2SD400,2SD468,2SD863,2SD1331,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SMALL-SIGNALTRANSISTOR DESCRIPTION 2SC3580isasiliconNPNepitaxialtypetransisor. Complementarywith2SA1398. APPLICATION Smalltypemotordrive,relaydrive,powersupplyapplication. | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | |||
SMALL-SIGNALTRANSISTOR DESCRIPTION 2SC3581isasiliconNPNepitaxialtypetransisordesignedforhighcollectorcurrentapplication. Complementarywith2SA1399. APPLICATION Forswitching,smalltypemotordrive,application. | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SC3582isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitrid | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LowNoiseandHighGain DESCRIPTION •LowNoiseFigure,HighGain,andHighCurrentCapability AchieveaVeryWideDynamicRangeandExcellentLinearity. •LowNoiseandHighGain NF=1.2dBTYP.@f=1.0GHz Ga=12dBTYP.@f=1.0GHz APPLICATIONS •Designedforuseinlow-noiseandsmallsignalampli | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
LowNoiseandHighGain DESCRIPTION •LowNoiseFigure,HighGain,andHighCurrentCapabilityAchieveaVeryWideDynamicRangeandExcellentLinearity. •LowNoiseandHighGain NF=1.2dBTYP.@f=1.0GHz Ga=13dBTYP.@f=1.0GHz APPLICATIONS •Designedforuseinlow-noiseandsmallsignalamplifi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistor Features ●NF1.2dBTYP.@f=1.0GHz ●Ga13dBTYP.@f=1.0GHz | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SC3583isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywide dynamicrangeandexcellentlinearity.Thisisachievedbydirectnitri | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SC3583isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitride | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MICROWAVELOWNOISEAMPLIFIER DESCRIPTION TheNE68133/2SC3583isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Low-noisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydir | CEL California Eastern Laboratories | |||
MICROWAVELOWNOISEAMPLIFIER DESCRIPTION TheNE68033/2SC3585isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.TheNE68033/2SC3585featuresexcellentpowergainwithverylow-noisefigures.TheNE68033/2SC3585employsdirectnitridepassivated | CEL California Eastern Laboratories | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconEpitaxialTransistor Features NF1.8dBTYP.@f=2.0GHz Ga9dBTYP.@f=2.0GHz | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR DESCRIPTION The2SC3585isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.The2SC3585featuresexcellentpowergainwithverylow-noisefigures.The2SC3585employsdirectnitridepassivatedbasesurfaceprocess(DNPproc | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONTRANSISTORFORMICROWAVELOW-NOISEAMPLIFICATION NPNEPITAXIALSILICONTRANSISTORFORMICROWAVELOW-NOISEAMPLIFICATION The2SC3587isanNPNepitaxialtransistordesignedforlownoiseamplificationat0.5to6.0GHz.Thistransistorhaslow-noiseandhigh-gaincharacteristicsinawidecollectorcurrentregion,andhasawidedynamicrange. F | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTOR FORMICROWAVELOW-NOISEAMPLIFICATION The2SC3587isanNPNepitaxialtransistordesignedforlownoise amplificationat0.5to6.0GHz.Thistransistorhaslow-noise andhigh-gaincharacteristicsinawidecollectorcurrentregion,and hasawidedynamicran | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSILICONTRIPLEDIFFUSEDTRANSISTORMP-3 DESCRIPTION The2SC3588-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES ●HighVoltageVCEO=400V ●Complementto2SA1400-Z | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSILICONTRIPLEDIFFUSEDTRANSISTORMP-3 DESCRIPTION The2SC3588-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES ●HighVoltageVCEO=400V ●Complementto2SA1400-Z | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconTripleDiffusedTransistor Features ●HighvoltageVCEO=400V | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SILICONTRANSISTOR NPNSILICONTRIPLEDIFFUSEDTRANSISTOR MP-3 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage VCE(sat)=0.5V(Max)@IC=300mA •HighCollector-EmitterBreakdownVoltage V(BR)CEO=400V(Min) •ComplementtoType2SA1400-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICONTRANSISTOR 文件:321.32 Kbytes Page:10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:RF TRANS NPN 10V 9GHZ SOT23 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Laboratories | |||
LowNoiseandHighGain 文件:308.73 Kbytes Page:6 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR 文件:321.52 Kbytes Page:10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:RF TRANS NPN 10V 10GHZ SOT23 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Laboratories | |||
iscSiliconNPNPowerTransistor 文件:285.08 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2SC358产品属性
- 类型
描述
- 型号
2SC358
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-23 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
国产 |
1942+ |
SOT-23 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
NEC |
20+/21+ |
SOT23/ |
9500 |
全新原装进口现货 |
|||
NEC |
22+ |
SOT23 |
600000 |
航宇科工半导体-央企优秀战略合作伙伴! |
|||
RENESAS |
SOT23 |
30000000 |
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上 |
||||
NEC |
2023+ |
SOT-23 |
8635 |
全新原装正品,优势价格 |
|||
NEC |
24+ |
SOT-23 |
860000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
2008++ |
SOT-23 |
37850 |
新进库存/原装 |
|||
NEC |
23+ |
SOT-23 |
1009 |
优势库存 |
2SC358规格书下载地址
2SC358参数引脚图相关
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- 2SC3588
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- 2SC3586
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- 2SC3584
- 2SC3583
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- 2SC3575
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- 2SC3569
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- 2SC3567
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- 2SC3565
- 2SC3564
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- 2SC3560
- 2SC3559
- 2SC3557
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- 2SC3553
- 2SC3552
- 2SC3551
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2SC358数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
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只做原装假一赔十
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产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
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DdatasheetPDF页码索引
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