2SC358晶体管资料

  • 2SC3580别名:2SC3580三极管、2SC3580晶体管、2SC3580晶体三极管

  • 2SC3580生产厂家:日本三菱公司

  • 2SC3580制作材料:Si-NPN

  • 2SC3580性质:低频或音频放大 (LF)_TR_输出极 (E)

  • 2SC3580封装形式:直插封装

  • 2SC3580极限工作电压:25V

  • 2SC3580最大电流允许值:0.7A

  • 2SC3580最大工作频率:180MHZ

  • 2SC3580引脚数:3

  • 2SC3580最大耗散功率:0.9W

  • 2SC3580放大倍数

  • 2SC3580图片代号:A-20

  • 2SC3580vtest:25

  • 2SC3580htest:180000000

  • 2SC3580atest:.7

  • 2SC3580wtest:.9

  • 2SC3580代换 2SC3580用什么型号代替:BC337,BC338,2SC1383,2SC2060,2SC2236,2SC2703,2SD400,2SD468,2SD863,2SD1331,

型号 功能描述 生产厂家&企业 LOGO 操作

SMALL-SIGNALTRANSISTOR

DESCRIPTION 2SC3580isasiliconNPNepitaxialtypetransisor. Complementarywith2SA1398. APPLICATION Smalltypemotordrive,relaydrive,powersupplyapplication.

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

ISAHAYA

SMALL-SIGNALTRANSISTOR

DESCRIPTION 2SC3581isasiliconNPNepitaxialtypetransisordesignedforhighcollectorcurrentapplication. Complementarywith2SA1399. APPLICATION Forswitching,smalltypemotordrive,application.

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

ISAHAYA

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SC3582isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitrid

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

LowNoiseandHighGain

DESCRIPTION •LowNoiseFigure,HighGain,andHighCurrentCapability AchieveaVeryWideDynamicRangeandExcellentLinearity. •LowNoiseandHighGain NF=1.2dBTYP.@f=1.0GHz Ga=12dBTYP.@f=1.0GHz APPLICATIONS •Designedforuseinlow-noiseandsmallsignalampli

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

LowNoiseandHighGain

DESCRIPTION •LowNoiseFigure,HighGain,andHighCurrentCapabilityAchieveaVeryWideDynamicRangeandExcellentLinearity. •LowNoiseandHighGain NF=1.2dBTYP.@f=1.0GHz Ga=13dBTYP.@f=1.0GHz APPLICATIONS •Designedforuseinlow-noiseandsmallsignalamplifi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSiliconEpitaxialTransistor

Features ●NF1.2dBTYP.@f=1.0GHz ●Ga13dBTYP.@f=1.0GHz

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SC3583isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywide dynamicrangeandexcellentlinearity.Thisisachievedbydirectnitri

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SC3583isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydirectnitride

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MICROWAVELOWNOISEAMPLIFIER

DESCRIPTION TheNE68133/2SC3583isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Low-noisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisisachievedbydir

CEL

California Eastern Laboratories

CEL

MICROWAVELOWNOISEAMPLIFIER

DESCRIPTION TheNE68033/2SC3585isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.TheNE68033/2SC3585featuresexcellentpowergainwithverylow-noisefigures.TheNE68033/2SC3585employsdirectnitridepassivated

CEL

California Eastern Laboratories

CEL

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSiliconEpitaxialTransistor

Features NF1.8dBTYP.@f=2.0GHz Ga9dBTYP.@f=2.0GHz

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR

DESCRIPTION The2SC3585isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.The2SC3585featuresexcellentpowergainwithverylow-noisefigures.The2SC3585employsdirectnitridepassivatedbasesurfaceprocess(DNPproc

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNEPITAXIALSILICONTRANSISTORFORMICROWAVELOW-NOISEAMPLIFICATION

NPNEPITAXIALSILICONTRANSISTORFORMICROWAVELOW-NOISEAMPLIFICATION The2SC3587isanNPNepitaxialtransistordesignedforlownoiseamplificationat0.5to6.0GHz.Thistransistorhaslow-noiseandhigh-gaincharacteristicsinawidecollectorcurrentregion,andhasawidedynamicrange. F

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORMICROWAVELOW-NOISEAMPLIFICATION The2SC3587isanNPNepitaxialtransistordesignedforlownoise amplificationat0.5to6.0GHz.Thistransistorhaslow-noise andhigh-gaincharacteristicsinawidecollectorcurrentregion,and hasawidedynamicran

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONTRIPLEDIFFUSEDTRANSISTORMP-3

DESCRIPTION The2SC3588-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES ●HighVoltageVCEO=400V ●Complementto2SA1400-Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONTRIPLEDIFFUSEDTRANSISTORMP-3

DESCRIPTION The2SC3588-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES ●HighVoltageVCEO=400V ●Complementto2SA1400-Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSiliconTripleDiffusedTransistor

Features ●HighvoltageVCEO=400V

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SILICONTRANSISTOR

NPNSILICONTRIPLEDIFFUSEDTRANSISTOR MP-3

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage VCE(sat)=0.5V(Max)@IC=300mA •HighCollector-EmitterBreakdownVoltage V(BR)CEO=400V(Min) •ComplementtoType2SA1400-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONTRANSISTOR

文件:321.32 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:RF TRANS NPN 10V 9GHZ SOT23 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

LowNoiseandHighGain

文件:308.73 Kbytes Page:6 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISOR

文件:321.52 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:RF TRANS NPN 10V 10GHZ SOT23 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

iscSiliconNPNPowerTransistor

文件:285.08 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SC358产品属性

  • 类型

    描述

  • 型号

    2SC358

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2024-5-15 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
23+
SOT-23
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
国产
1942+
SOT-23
9852
只做原装正品现货或订货!假一赔十!
NEC
20+/21+
SOT23/
9500
全新原装进口现货
NEC
22+
SOT23
600000
航宇科工半导体-央企优秀战略合作伙伴!
RENESAS
SOT23
30000000
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上
NEC
2023+
SOT-23
8635
全新原装正品,优势价格
NEC
24+
SOT-23
860000
明嘉莱只做原装正品现货
NEC
23+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
2008++
SOT-23
37850
新进库存/原装
NEC
23+
SOT-23
1009
优势库存

2SC358芯片相关品牌

  • AVAGO
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  • HUBERSUHNER
  • IXYS
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  • Micron
  • MMD
  • NJSEMI
  • ROSENBERGER
  • Vicor
  • WALL

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