SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC3580 is a silicon NPN epitaxial type transisor. Complementary with 2SA1398. APPLICATION Small type motor drive, relay drive, power supply application.

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC3581 is a silicon NPN epitaxial type transisor designed for high collector current application. Complementary with 2SA1399. APPLICATION For switching, small type motor drive, application.

Low Noise and High Gain

DESCRIPTION • Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. • Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz APPLICATIONS • Designed for use in low-noise and small signal ampli

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitri

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by dir

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

Low Noise and High Gain

DESCRIPTION • Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. • Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 13 dB TYP. @f = 1.0 GHz APPLICATIONS • Designed for use in low-noise and small signal amplifi

NPN Silicon Epitaxial Transistor

Features ● NF 1.2 dB TYP. @f = 1.0 GHz ● Ga 13 dB TYP. @f = 1.0 GHz

NPN Silicon Epitaxial Transistor

Features NF 1.8dB TYP. @f = 2.0 GHz Ga 9dB TYP.@f=2.0GHz

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP proc

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The NE68033 / 2SC3585 features excellent power gain with very low-noise figures. The NE68033 / 2SC3585 employs direct nitride passivated

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. F

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 400 V ● Complement to 2SA1400-Z

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 400 V ● Complement to 2SA1400-Z

SILICON TRANSISTOR

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC= 300mA • High Collector-Emitter Breakdown Voltage V(BR)CEO= 400V(Min) • Complement to Type 2SA1400-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

NPN Silicon Triple Diffused Transistor

Features ● High voltage VCEO=400V

RF Tranasitor

高频三极管

Small Signal Silicon Bipolars

SILICON TRANSISTOR

文件：321.32 Kbytes Page：10 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS NPN 10V 9GHZ SOT23 分立半导体产品 晶体管 - 双极（BJT）- 射频

Low Noise and High Gain

文件：308.73 Kbytes Page：6 Pages

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

文件：321.52 Kbytes Page：10 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS NPN 10V 10GHZ SOT23 分立半导体产品 晶体管 - 双极（BJT）- 射频

isc Silicon NPN Power Transistor

文件：285.08 Kbytes Page：2 Pages