封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS NPN 10V 10GHZ SOT23 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN Silicon Epitaxial Transistor

Features NF 1.8dB TYP. @f = 2.0 GHz Ga 9dB TYP.@f=2.0GHz

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The NE68033 / 2SC3585 features excellent power gain with very low-noise figures. The NE68033 / 2SC3585 employs direct nitride passivated

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP proc

Low Noise and High Gain

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