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2SC3583晶体管资料
2SC3583别名：2SC3583三极管、2SC3583晶体管、2SC3583晶体三极管
2SC3583生产厂家：日本日电公司
2SC3583制作材料：Si-NPN
2SC3583性质：表面帖装型 （SMD）_超高频/特高频 （UHF）
2SC3583封装形式：贴片封装
2SC3583极限工作电压：20V
2SC3583最大电流允许值：0.065A
2SC3583最大工作频率：9GHZ
2SC3583引脚数：3
2SC3583最大耗散功率：0.6W
2SC3583放大倍数：
2SC3583图片代号：H-15
2SC3583vtest：20
2SC3583htest：9000000000
- 2SC3583atest：0.065
2SC3583wtest：0.6
2SC3583代换 2SC3583用什么型号代替：2SC3606,2SC3730,2SC3904,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3583 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitri | NEC 瑞萨 |   | |
2SC3583 | MICROWAVE LOW NOISE AMPLIFIER DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by dir | CEL | | |
2SC3583 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride | RENESAS 瑞萨 | | |
2SC3583 | Low Noise and High Gain DESCRIPTION • Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. • Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 13 dB TYP. @f = 1.0 GHz APPLICATIONS • Designed for use in low-noise and small signal amplifi | ISC 无锡固电 | | |
2SC3583 | NPN Silicon Epitaxial Transistor Features ● NF 1.2 dB TYP. @f = 1.0 GHz ● Ga 13 dB TYP. @f = 1.0 GHz | KEXIN 科信电子 | | |
2SC3583 | RF Tranasitor | UTC 友顺 | | |
2SC3583 | 高频三极管 | ETC 知名厂家 | ETC | |
2SC3583 | Small Signal Silicon Bipolars | RENESAS 瑞萨 | | |
SILICON TRANSISTOR 文件：321.32 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS NPN 10V 9GHZ SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS NPN 10V 9GHZ SOT23 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | |
2SC3583产品属性
- 类型
描述
- 型号
2SC3583
- 制造商
NEC
- 功能描述
*
- 制造商
NEC
- 功能描述
Transistor 3k per reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2023+ |
SOT-23 |
58000 |
进口原装,现货热卖 |
|||
RENESAS/瑞萨 |
2511 |
SOT-23 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
23+ |
SOT-23 |
240884 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Renesas(瑞萨) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RENESAS |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NEC/Renesas |
20+ |
SOT23-3 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
23+ |
SOT23-3 |
50000 |
只做原装正品 |
|||
24+ |
N/A |
79000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NEC |
10V0.065A0.2W3PS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
2SC3583芯片相关品牌
2SC3583规格书下载地址
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2SC3583数据表相关新闻
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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