NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 400 V ● Complement to 2SA1400-Z

NPN Silicon Triple Diffused Transistor

Features ● High voltage VCEO=400V

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC= 300mA • High Collector-Emitter Breakdown Voltage V(BR)CEO= 400V(Min) • Complement to Type 2SA1400-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

SILICON TRANSISTOR

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

Transistor-Bipolar Power Transistors

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 400 V ● Complement to 2SA1400-Z

isc Silicon NPN Power Transistor

文件：285.08 Kbytes Page：2 Pages