NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3587 is an NPN epitaxial transistor designed for lownoise

amplification at 0.5 to 6.0 GHz. This transistor has low-noise

and high-gain characteristics in a wide collector current region, and

has a wide dynamic range.

FEATURES

· Low noise : NF = 1.7 dB TYP. @ f = 2 GHz

NF = 2.6 dB TYP. @ f = 4 GHz

· High power gain : GA = 12.5 dB TYP. @ f = 2 GHz

GA = 8.0 dB TYP. @ f = 4 GHz