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2N700晶体管资料

  • 2N700(A,/18)别名：2N700(A,/18)三极管、2N700(A,/18)晶体管、2N700(A,/18)晶体三极管

  • 2N700(A,/18)生产厂家：CSR_美国摩托罗拉半导体公司_SSI_SYL

  • 2N700(A,/18)制作材料：Ge-PNP

  • 2N700(A,/18)性质：调幅 （AM）_调频 （FM）

  • 2N700(A,/18)封装形式：直插封装

  • 2N700(A,/18)极限工作电压：25V

  • 2N700(A,/18)最大电流允许值：0.05A

  • 2N700(A,/18)最大工作频率：800MHZ

  • 2N700(A,/18)引脚数：4

  • 2N700(A,/18)最大耗散功率：0.075W

  • 2N700(A,/18)放大倍数：

  • 2N700(A,/18)图片代号：D-13

  • 2N700(A,/18)vtest：25

  • 2N700(A,/18)htest：800000000

  • 2N700(A,/18)atest：.05

  • 2N700(A,/18)wtest：.075

  • 2N700(A,/18)代换 2N700(A,/18)用什么型号代替：AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,

2N700价格

参考价格：￥0.2874

型号：2N7000 品牌：FAIRCHILD 备注：这里有2N700多少钱，2024年最近7天走势，今日出价，今日竞价，2N700批发/采购报价，2N700行情走势销售排行榜，2N700报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

MotorolaMotorola, Inc

摩托罗拉

Motorola
2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX
2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay
2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5Ω)@VGS=10V RDS(on)(Max5.3Ω)@VGS=4.5V ■GateCharge(Typical

semiWell

semiWell

semiWell
2N7000

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
2N7000

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7000

TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET

Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2N7000

N-ChannelEnhancementModePowerMos.FET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7000

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns

WEITRONWEITRON

威堂電子科技

WEITRON
2N7000

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapability.

KECKEC CORPORATION

KEC株式会社

KEC
2N7000

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor •Powerdissipation350mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec
2N7000

N-channelenhancementmodeverticalD-MOStransistor

N-channelenhancementmodeverticalD-MOStransistorinaTO-92variantenvelope,intendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES 1.LowRDS(on) 2.DirectinterfacetoC-MOS,TTL,etc. 3.High-speedswitching 4.Nosecondarybreakdown.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
2N7000

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.

Calogic

Calogic, LLC

Calogic
2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-92package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N7000

MOSFET(N-Channel)

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2N7000

N-ChannelMOSFET

Features •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Marking:2N7000 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7000

MOSFET(N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay
2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip
2N7000

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

DIODESDiodes Incorporated

达尔科技

DIODES
2N7000

N-ChannelEnhancementModeMOSFET

■Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N7000

N-ChannelEnhancementModePowerMOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS
2N7000A

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontroolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式会社

KEC
2N7000BU

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●FastSwitchingTimes ●ImprovedInductiveRuggedness ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000G

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
2N7000G

SmallSignalMOSFET200mAmps,60Volts

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000K

NChannelMOSFETESDProtected2000V

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式会社

KEC
2N7000KL

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems

VishayVishay Siliconix

威世科技

Vishay
2N7000KL-TR1

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems

VishayVishay Siliconix

威世科技

Vishay
2N7000P

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO *RDS(on)=5Ω

DIODESDiodes Incorporated

达尔科技

DIODES
2N7000RLRA

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000RLRM

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000RLRP

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000TA

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●FastSwitchingTimes ●ImprovedInductiveRuggedness ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000Z

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7000ZG-T92-B

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7000ZG-T92-K

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7000ZG-T92-R

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7000ZL1

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000ZL-T92-B

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7000ZL-T92-K

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7000ZL-T92-R

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=60V,ID=0.115A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER
2N7002

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式会社

KEC
2N7002

N-channelverticalD-MOStransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability:2N7002inSOT23. Features TrenchMOS™technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage. Applic

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
2N7002

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF· •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •AdvancedTrenchProcessTechnology •HighInputImpedance •HighSpeedSwitching •CMOSLogicCompatibleInput •Marking:7002/S72 ··

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002

N-ChannelMOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Drain-SourcevoltageVDS60V DrainCurrentID115mA PowerDissipationPD225mW

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N7002

N-CHANNELMOSFET

PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability

SSC

Silicon Standard Corp.

SSC
2N7002

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns

WEITRONWEITRON

威堂電子科技

WEITRON
2N7002

NChannelSmallSignalMOSFET

●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER

STANSONStanson Technology

Stanson 科技

STANSON
2N7002

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical

semiWell

semiWell

semiWell
2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant.

Calogic

Calogic, LLC

Calogic
2N7002

N-CHANNELENHANCEMENT-MODEMOSFET

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay
2N7002

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

2N700产品属性

  • 类型

    描述

  • 型号

    2N700

  • 功能描述

    TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-72

2N700供应商更多...

更新时间：2024-6-4 10:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市永贝尔科技有限公司
2N7000
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
询价
深圳市佳鑫美电子科技有限公司
2N7000
SILICONIX
22+
TO-92
2987
只售原装自家现货!诚信经营!欢迎来电
询价
深圳市天芯威科技有限公司
2N7000
ON/安森美
23+
N/A
25850
新到现货,只有原装
询价
深圳市豪迈兴电子有限公司
2N7000
PH
2339+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市正迈科技有限公司
2N7000
FSC/ON
23+
原包装原封□□
107860
原装进口特价供应QQ1304306553更多详细咨询库存
询价
深圳中芯器材有限公司
2N7000
PHI
NEW
TO-260
16010
原装假一赔十现货特价热卖
询价
深圳市龙瀚电子有限公司
2N7000RLRAG
ON
16+/17+
TO-92
7103
渠道现货库存-原装正品
询价
深圳市向鸿伟业电子有限公司
2N7000
ON/安森美
2410+
TO-92
80000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
深圳硅原半导体有限公司
2N7000TA
ON/安森美
TO92
24366
诚心经营 原盒原标 正品现货 价格美丽假一罚十
询价
中天科工半导体（深圳）有限公司
2N7000TA
onsemi
24+
TO-92-3
30000
晶体管-分立半导体产品-原装正品
询价

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