FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION.\nFEATURES\n·High density cell design for low RDS(ON).\n·Voltage controolled small signal switch.\n·Rugged and reliable.\n·High saturation current capablity. ·High density cell design for low RDS(ON).\n·Voltage controolled small signal switch.\n·Rugged and reliable.\n·High saturation current capablity.;

INTERFACE AND SWITCHING APPLICATION.

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CASE 29-04, STYLE 22 TO-92 (TO-226AA)

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL-ENHANCEMENT

文件：288.83 Kbytes Page：3 Pages

N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件：18.83 Kbytes Page：2 Pages