丝印代码：2N7000；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

丝印代码：2N7000；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

丝印代码：2N7000；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

丝印代码：2N7000；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

N-Channel Enhancement Mode Field Effect Transistor

Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

N沟道增强模式场效应晶体管60V，200mA，5Ω

• Voltage Controlled Small Signal Switch\n• High Saturation Current Capability\n• Rugged and Reliable\n• High Density Cell Design for Low RDS(ON);

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

丝印代码：702；N-Channel Enhancement Mode MOSFET

■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

丝印代码：2N7000021；N-Channel Enhancement Mode Power MOSFET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

N-Channel MOSFET

Features • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • Halogen free available upon request by adding suffix -HF • Marking: 2N7000 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

CASE 29-04, STYLE 22 TO-92 (TO-226AA)

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92

Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available*

Logic N-Channel MOSFET

General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. Features ■ RDS(on) (Max 5 Ω )@VGS=10V RDS(on) (Max 5.3Ω )@VGS=4.5V ■ Gate Charge (Typical

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

■ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage,

TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET

Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Small Signal MOSFET N-Channel

Features: * Low On-Resistance : 5 Ω * Low Input Capacitance: 60PF * Low Out put Capacitance : 25PF * Low Threshole :1.4V(TYE) * Fast Switching Speed : 10ns

FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capability.

N-Channel Enhancement Mode Power Mos.FET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor • Power dissipation 350 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

N-channel enhancement mode vertical D-MOS transistor

N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. FEATURES 1. Low RDS(on) 2. Direct interface to C-MOS, TTL, etc. 3. High-speed switching 4. No secondary breakdown.

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package.

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-92 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power management

MOSFET( N-Channel )

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

MOSFET (N-Channel)

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

Small Signal MOSFET Bare Die

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N-Channel 60-V (D-S) MOSFET

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Small Signal MOSFET

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N-Channel Enhancement Mode FET

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Small Signal MOSFET 200 mAmps, 60 Volts N?묬hannel TO??2 200 mAMPS 60 VOLTS

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N-channel 60V - 1.8廓 - 0.35A - SOT23-3L / TO-92 STripFET??Power MOSFET

文件：355.46 Kbytes Page：14 Pages

N-Channel 60-V (D-S) MOSFET

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N-Channel Enhancement-Mode Vertical DMOS FETs

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N-Channel Enhancement Mode Field Effect Transistor

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DMOS Transistors (N-Channel)

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N-CHANNEL-ENHANCEMENT

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N-CHANNEL ENHANCEMENT MODE

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N-Channel 60-V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

COLOUR TELEVISION

文件：6.0518 Mbytes Page：70 Pages

N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Fast Switching Times ● Improved Inductive Ruggedness ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

Small Signal MOSFET 200 mAmps, 60 Volts

Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available*

N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO * RDS(on) = 5 Ω

Plastic-Encapsulate MOSFET

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92

Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available*

Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92

Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available*

Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92

Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available*