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2N7000价格
参考价格：￥0.2874
型号：2N7000 品牌：FAIRCHILD 备注：这里有2N7000多少钱，2025年最近7天走势，今日出价，今日竞价，2N7000批发/采购报价，2N7000行情走势销售排行榜，2N7000报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7000 | CASE29-04,STYLE22TO-92(TO-226AA)
| MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   |
2N7000 | N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc |  | |
2N7000 | N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
2N7000 | N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
2N7000 | SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92 SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
2N7000 | LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5Ω)@VGS=10V RDS(on)(Max5.3Ω)@VGS=4.5V ■GateCharge(Typical | semiWell SemiWell Semiconductor |  | |
2N7000 | N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
2N7000 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR ■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage, | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
2N7000 | TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications. | DCCOM Dc Components |  | |
2N7000 | N-ChannelEnhancementModePowerMos.FET FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | |
2N7000 | SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns | WEITRON Weitron Technology |  | |
2N7000 | FIELDEFFECTTRANSISTOR INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapability. | KECKEC CORPORATION KEC株式会社 |  | |
2N7000 | N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor •Powerdissipation350mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack | DiotecDiotec Semiconductor 德欧泰克 |  | |
2N7000 | N-channelenhancementmodeverticalD-MOStransistor N-channelenhancementmodeverticalD-MOStransistorinaTO-92variantenvelope,intendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES 1.LowRDS(on) 2.DirectinterfacetoC-MOS,TTL,etc. 3.High-speedswitching 4.Nosecondarybreakdown. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
2N7000 | N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package. | Calogic Calogic, LLC |  | |
2N7000 | N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
2N7000 | IscN-ChannelMOSFETTransistor •FEATURES •WithTO-92package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2N7000 | MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | |
2N7000 | N-ChannelMOSFET Features •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Marking:2N7000 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | |
2N7000 | MOSFET(N-Channel) MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | |
2N7000 | N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技威世科技半导体 | | |
2N7000 | N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | |
2N7000 | N-CHANNELENHANCEMENTMODEVERTICALDMOSFET N-CHANNELENHANCEMENTMODEVERTICALDMOSFET | DIODESDiodes Incorporated 美台半导体 |  | |
2N7000 | N-ChannelEnhancementModeMOSFET ■Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
2N7000 | N-ChannelEnhancementModePowerMOSFET FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter | SECELECTRONICS SEC Electronics Inc. |  | |
2N7000 | N-ChannelEnhancementModeFieldEffectTransistor Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N7000 | N-ChannelEnhancementModeFieldEffectTransistor Features HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability. GeneralDescription TheseN-Channelenhancementmodefieldeffecttransistors areproducedusingFairchild'sproprietary,highcelldensity, | SYC SYC Electronica |  | |
2N7000 | COLOURTELEVISION 文件：6.0518 Mbytes Page：70 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  | |
2N7000 | N-Channel60-V(D-S)MOSFET 文件：64.519 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
2N7000 | N-Channel60-V(D-S)MOSFET 文件：68.91 Kbytes Page：7 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
2N7000 | N-CHANNELENHANCEMENTMODE 文件：361.62 Kbytes Page：5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
2N7000 | SmallSignalMOSFETBareDie 文件：730.12 Kbytes Page：4 Pages | SS Silicon Supplies |  | |
2N7000 | N-Channel60-V(D-S)MOSFET 文件：64.519 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
2N7000 | SmallSignalMOSFET 文件：148.75 Kbytes Page：2 Pages | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | |
2N7000 | N-ChannelEnhancementModeFET 文件：140.21 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | |
2N7000 | SmallSignalMOSFET200mAmps,60VoltsN?묬hannelTO??2200mAMPS60VOLTS 文件：57.66 Kbytes Page：4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N7000 | N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET 文件：355.46 Kbytes Page：14 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
2N7000 | N-ChannelEnhancement-ModeVerticalDMOSFETs 文件：524.31 Kbytes Page：5 Pages | SUTEX Supertex, Inc | | |
2N7000 | N-ChannelEnhancementModeFieldEffectTransistor 文件：220.09 Kbytes Page：10 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  | |
2N7000 | DMOSTransistors(N-Channel) 文件：232.48 Kbytes Page：5 Pages | GE GE Industrial Company |  | |
2N7000 | N-CHANNEL-ENHANCEMENT 文件：288.83 Kbytes Page：3 Pages | TRSYS Transys Electronics |  | |
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
FIELDEFFECTTRANSISTOR INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontroolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式会社 | | | |
AdvancedSmallSignalMOSFET BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●FastSwitchingTimes ●ImprovedInductiveRuggedness ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SmallSignalMOSFET200mAmps,60Volts SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NChannelMOSFETESDProtected2000V INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式会社 | | | |
N-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers, Display,Memories,Transistors,etc. •BatteryOperatedSystems | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers, Display,Memories,Transistors,etc. •BatteryOperatedSystems | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO *RDS(on)=5Ω | DIODESDiodes Incorporated 美台半导体 | | | |
Plastic-EncapsulateMOSFET FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | | |
SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92 SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92 SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92 SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
AdvancedSmallSignalMOSFET BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●FastSwitchingTimes ●ImprovedInductiveRuggedness ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
2N7000产品属性
- 类型
描述
- 型号
2N7000
- 功能描述
MOSFET N-CHANNEL 60V 200mA
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISH |
17+ |
TO92 |
6200 |
100%原装正品现货 |
|||
长电 |
23+ |
TO-92 |
60000 |
原装正品,假一罚十 |
|||
PHI |
2024 |
TO-92 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
24+ |
TO-92_Forming1 |
127048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
CJ(江苏长电/长晶) |
2023+ |
N/A |
4550 |
全新原装正品 |
|||
ON(安森美) |
2447 |
TO-92(TO-92-3) |
105000 |
10000个/袋一级代理专营品牌!原装正品,优势现货,长 |
|||
ON/安森美 |
2410+ |
TO-92 |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
VISHAY |
1950+ |
TO-92 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
ON |
23+ |
TO-92 |
56000 |
2N7000芯片相关品牌
2N7000规格书下载地址
2N7000参数引脚图相关
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- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
