N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO * RDS(on) = 5 Ω

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

CASE 29-04, STYLE 22 TO-92 (TO-226AA)

N-CHANNEL-ENHANCEMENT

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N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

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