Features

High density cell design for low RDS(ON).

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

General Description

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,

DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable,

and fast switching performance. They can be used in most

applications requiring up to 400mA DC and can deliver

pulsed currents up to 2A. These products are particularly

suited for low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and other

switching applications.