N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION.FEATURES\n• ESD Protected 2000V.\n• High density cell design for low RDS(ON).\n• Voltage controlled small signal switch.\n• Rugged and reliable.\n• High saturation current capablity. • ESD Protected 2000V.\n• High density cell design for low RDS(ON).\n• Voltage controlled small signal switch.\n• Rugged and reliable.\n• High saturation current capablity.;

低压MOS管

MOSFET TO-92

N-CHannel Enhancement Mode MOSFET

文件：218.79 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

CASE 29-04, STYLE 22 TO-92 (TO-226AA)

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL-ENHANCEMENT

文件：288.83 Kbytes Page：3 Pages

N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件：18.83 Kbytes Page：2 Pages