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2N491晶体管资料
2N491(A)别名：2N491(A)三极管、2N491(A)晶体管、2N491(A)晶体三极管
2N491(A)生产厂家：
2N491(A)制作材料：UJT-P
2N491(A)性质：
2N491(A)封装形式：直插封装
2N491(A)极限工作电压：60V
2N491(A)最大电流允许值：0.07A
2N491(A)最大工作频率：<1MHZ或未知
2N491(A)引脚数：4
2N491(A)最大耗散功率：
2N491(A)放大倍数：
2N491(A)图片代号：D-13
2N491(A)vtest：60
2N491(A)htest：999900
- 2N491(A)atest：0.07
2N491(A)wtest：0
2N491(A)代换 2N491(A)用什么型号代替：
2N491价格
参考价格：￥7.2544
型号：2N4915 品牌：Semiconductors 备注：这里有2N491多少钱，2025年最近7天走势，今日出价，今日竞价，2N491批发/采购报价，2N491行情走势销售排行榜，2N491报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N491 | UNIJUNCTION TRANSISTORS UNIJUNCTION TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
2N491 | Diode UNIJUNCTION TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N491 | NPN SILICON UNIJUNCTION TRANSISTOR NPN SILICON UNIJUNCTION TRANSISTOR Silicon unijunction transistors are three-terminal device having a stable “N” type negative resistance characteristic over a wide temperature range. FEATURES • Stable operation over wide temperature range • Low leakage current • Low peak point current • Gua | DIGITRON | | |
2N491 | Unijunction Transistors | DIGITRON | | |
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MEDIUM-POWER NPN SILICON TRANSISTORS Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area • 2N4912 complement to type 2N4900 APPLICATIONS • Designed for driver circuits,switching and amplifier applications | SAVANTIC | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation APPLICATIONS • Designed for driver circuits, switching and amplifier applications. | ISC 无锡固电 | | ||
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE | SEME-LAB | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation APPLICATIONS • Designed for driver circuits, switching and amplifier applications. | ISC 无锡固电 | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
MEDIUM-POWER NPN SILICON TRANSISTORS Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 60V IC = 4A | SEME-LAB | | ||
SILICON EPITAXIAL NPN TRANSISTOR SILICON EPITAXIAL NPN TRANSISTOR • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available | TTELEC | | ||
MEDIUM-POWER NPN SILICON TRANSISTORS Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation • Complement to Type 2N4900 APPLICATIONS • Designed for driver circuits, switching and amplifier application | ISC 无锡固电 | | ||
POWER TRANSISTORS(1A,80V,25W) NPN SILICON TRANSISTORS ... designed for driver circuits, switching and amplifier applications. FEATURES * Low Collector-Emitter Saturation Voltage VCE(sat)=0.6 V (Max.) @ Ic = 1.0 A * Excellent Safe Operating Area * Gain Specified to Ic = 1.0 Amp. * Complement to PNP 2N499. | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE | SEME-LAB | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
Silicon NPN Power Transistors DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A • DC Current Gain- : hFE= 25-100 @IC= 2.5A • Complement to Type 2N4904 APPLICATIONS • Designed for general purpose use in power amplifier and switching circuits. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N4904/4905/4906 • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications. | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N4904/4905/4906 • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications. | SAVANTIC | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SI NPN POWER BJT, I(C) = 5A TO 9.9A Description: Si NPN Power BJT, I(C) = 5 A to 9.9 A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
isc Silicon NPN Power Transistors DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A • DC Current Gain- : hFE= 25-100 @IC= 2.5A • Complement to Type 2N4905 APPLICATIONS • Designed for general purpose use in power amplifier and switching circuits. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistors Silicon NPN Power T ransistors DESCRIPTION ·Low Collector Saturation Vol tage- : VCE(sat)= 1.5V(Max.)@IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4906 APPLICA TIONS ·Designed for general purpose use in p | ISC 无锡固电 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
NPN POWER TRANSISTORS NPN power transistors for use in power amplifier and switching circuit. Complement to PNP 2N4906 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N4904/4905/4906 • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications. | SAVANTIC | | ||
SI PNP LP HF BJT Description: Si PNP LP HF BJT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MEDIUM-POWER PLASTIC PNP SILICON TRANSISTOR . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921,2N4922 2N4923 • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | JMNIC 锦美电子 | | ||
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
GENERAL.PURPOSE POWER TRANSISTORS These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | ISC 无锡固电 | | ||
PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4918, 2N4919, and 2N4920 are Silicon PNP Expitaxial Base Power Transistors designed for Medium power amplifier and switching applications. | Central | | ||
Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
GENERAL.PURPOSE POWER TRANSISTORS These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | ISC 无锡固电 | | ||
MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4918, 2N4919, and 2N4920 are Silicon PNP Expitaxial Base Power Transistors designed for Medium power amplifier and switching applications. | Central | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | SAVANTIC | | ||
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
UNIJUNCTION TRANSISTORS UNIJUNCTION TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Diode UNIJUNCTION TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
2N491产品属性
- 类型
描述
- 型号
2N491
- 制造商
General Electric Company
- 制造商
GSI Technology
- 制造商
Texas Instruments
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
CAN3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON/安森美 |
24+ |
NA/ |
1800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
ONSemi |
1609 |
TO-225 |
178 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
SST |
23+ |
NA |
150 |
专做原装正品,假一罚百! |
|||
MOTOROLA/摩托罗拉 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
ONSEMI |
21+ |
TO-225 |
7496 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON |
25+23+ |
TO-225 |
18003 |
绝对原装正品全新进口深圳现货 |
2N491芯片相关品牌
2N491规格书下载地址
2N491参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N4927
- 2N4926
- 2N4925(S)
- 2N4924(S)
- 2N4923
- 2N4922
- 2N4921
- 2N4920G
- 2N4920
- 2N492(A)
- 2N492
- 2N491B
- 2N491A
- 2N4919G
- 2N4919
- 2N4918G
- 2N4918
- 2N4917
- 2N4916
- 2N4915
- 2N4914
- 2N4913
- 2N4912X
- 2N4912
- 2N4911X
- 2N4911
- 2N4910X
- 2N4910
- 2N491(A)
- 2N490C
- 2N490B
- 2N490A
- 2N4909
- 2N4908
- 2N4907
- 2N4906
- 2N4905
- 2N4904C
- 2N4904
- 2N4903
- 2N4902X
- 2N4902C
- 2N4902
- 2N4901
- 2N4900X
- 2N4900
- 2N490(A)
- 2N490
- 2N49
- 2N489C...494C
- 2N489B...494B
- 2N489B
- 2N489A
- 2N4899
- 2N4898
- 2N4897
- 2N4896
- 2N4895
- 2N4894(L)
2N491数据表相关新闻
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2020-8-52N3904S-RTK/PS进口原装现货假一罚十
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2019-8-62N3904S-RTK/PS，SOT-23，KEC原装正品现货
2N3904S-RTK/P S，SOT-23，KEC原装正品现货
2019-7-17
DdatasheetPDF页码索引
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