NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE

Bipolar Junction Transistors

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

文件：20.86 Kbytes Page：2 Pages

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

文件：20.86 Kbytes Page：2 Pages

Bipolar NPN Device in a Hermetically sealed

文件：14.66 Kbytes Page：1 Pages

Bipolar NPN Device in a Hermetically sealed

文件：15.4 Kbytes Page：1 Pages

Power Transistors

Power Transistors TO-66 Case

Power Transistors

Power Transistors

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation APPLICATIONS • Designed for driver circuits, switching and amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area • 2N4912 complement to type 2N4900 APPLICATIONS • Designed for driver circuits,switching and amplifier applications