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2N4918晶体管资料
2N4918别名：2N4918三极管、2N4918晶体管、2N4918晶体三极管
2N4918生产厂家：美国摩托罗拉半导体公司_美国国民半导体公司_德国电
2N4918制作材料：Si-PNP
2N4918性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N4918封装形式：直插封装
2N4918极限工作电压：40V
2N4918最大电流允许值：1A
2N4918最大工作频率：>3MHZ
2N4918引脚数：3
2N4918最大耗散功率：30W
2N4918放大倍数：
2N4918图片代号：B-21
2N4918vtest：40
2N4918htest：3000100
- 2N4918atest：1
2N4918wtest：30
2N4918代换 2N4918用什么型号代替：BD136,BD166,BD176,BD186,BD234,BD438,CD50A,
2N4918价格
参考价格：￥4.1913
型号：2N4918 品牌：Centralr 备注：这里有2N4918多少钱，2025年最近7天走势，今日出价，今日竞价，2N4918批发/采购报价，2N4918行情走势销售排行榜，2N4918报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N4918 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | SAVANTIC |   | |
2N4918 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921,2N4922 2N4923 • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | JMNIC 锦美电子 | | |
2N4918 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | ISC 无锡固电 | | |
2N4918 | Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | |
2N4918 | GENERAL.PURPOSE POWER TRANSISTORS These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | |
2N4918 | Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | |
2N4918 | PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4918, 2N4919, and 2N4920 are Silicon PNP Expitaxial Base Power Transistors designed for Medium power amplifier and switching applications. | Central | | |
2N4918 | MEDIUM-POWER PLASTIC PNP SILICON TRANSISTOR . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N4918 | MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N4918 | 封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 40V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
2N4918 | Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Central | | |
2N4918 | Trans GP BJT PNP 40V 1A 3-Pin TO-126 Box | ETC 知名厂家 | ETC | |
2N4918 | 1.0 A，40 V PNP 双极功率晶体管 | ONSEMI 安森美半导体 | | |
2N4918 | Medium-Power Plastic PNP Silicon Transistors 文件：203.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
2N4918 | Silicon PNP Power Transistors 文件：47.23 Kbytes Page：3 Pages | JMNIC 锦美电子 | | |
2N4918 | Silicon PNP Power Transistors 文件：106.51 Kbytes Page：3 Pages | SAVANTIC | | |
2N4918 | Medium-Power Plastic PNP Silicon Transistors 文件：120.83 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP Silicon Transistors 文件：120.83 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors 文件：47.23 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Medium-Power Plastic PNP Silicon Transistors 文件：203.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | |
2N4918产品属性
- 类型
描述
- 型号
2N4918
- 功能描述
两极晶体管 - BJT PNP Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-225 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
24+ |
NA/ |
547 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
ON |
20+ |
TP126 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
ON |
2025+ |
TO-225 |
3000 |
原装正品现货供应商原厂渠道物美价优 |
|||
ON |
24+ |
N/A |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
2N4918 |
25+ |
15 |
15 |
||||
MOTOROLA/摩托罗拉 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
2N4918芯片相关品牌
2N4918规格书下载地址
2N4918参数引脚图相关
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- 2N4923G
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- 2N4914
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- 2N490B
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- 2N4909
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- 2N490(A)
2N4918数据表相关新闻
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DdatasheetPDF页码索引
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