POWER TRANSISTORS(1A,80V,25W)

NPN SILICON TRANSISTORS ... designed for driver circuits, switching and amplifier applications. FEATURES * Low Collector-Emitter Saturation Voltage VCE(sat)=0.6 V (Max.) @ Ic = 1.0 A * Excellent Safe Operating Area * Gain Specified to Ic = 1.0 Amp. * Complement to PNP 2N499.

Power Transistors

Power Transistors

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation • Complement to Type 2N4900 APPLICATIONS • Designed for driver circuits, switching and amplifier application

MEDIUM-POWER NPN SILICON TRANSISTORS

Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications.

Power Transistors

Power Transistors TO-66 Case

SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL NPN TRANSISTOR • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available

25W NPN Medium Power BJT Transistor

This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Trans GP BJT NPN 80V 1A 3-Pin(2+Tab) TO-66 Sleeve

三极管

封装/外壳：TO-213AA，TO-66-2 包装：散装 描述：TRANS PNP 80V 4A TO66 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON EPITAXIAL NPN TRANSISTOR

文件：88.72 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：118 Kbytes Page：3 Pages

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE

SILICON NPN POWER TRANSISTOR

文件：344.41 Kbytes Page：2 Pages

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

文件：20.86 Kbytes Page：2 Pages