COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N4904/4905/4906 • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications.

isc Silicon NPN Power Transistors

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A • DC Current Gain- : hFE= 25-100 @IC= 2.5A • Complement to Type 2N4905 APPLICATIONS • Designed for general purpose use in power amplifier and switching circuits.

Power Transistors

Power Transistors

SI NPN POWER BJT, I(C) = 5A TO 9.9A

Description: Si NPN Power BJT, I(C) = 5 A to 9.9 A

包装：散装 描述：NPN SILICON TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

87.5W NPN High Power BJT Transistor

三极管

Bipolar Junction Transistors

Silicon NPN Power Transistors

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COMPLEMENTARY SILICON POWER TRANSISTORS

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SILICON EPITAXIAL

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Bipolar NPN Device in Hermetically sealed TO3 Metal Package

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SILICON EPITAXIAL

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