NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

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Bipolar Junction Transistors

Bipolar NPN Device in a Hermetically sealed

Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 60V IC = 4A

Bipolar NPN Device in a Hermetically sealed

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Power Transistors

Power Transistors TO-66 Case

Power Transistors

Power Transistors

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation APPLICATIONS • Designed for driver circuits, switching and amplifier applications.