Power Transistors

Power Transistors TO-66 Case

Power Transistors

Power Transistors

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation APPLICATIONS • Designed for driver circuits, switching and amplifier applications.

MEDIUM-POWER NPN SILICON TRANSISTORS

Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications.

25W NPN Medium Power BJT Transistor

This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Silicon NPN Power Transistors

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包装：散装 描述：NPN SILICON TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE

Bipolar NPN Device in a Hermetically sealed

Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 60V IC = 4A

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

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Bipolar NPN Device in a Hermetically sealed

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