NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS • SCREENING OPTIONS AVAILABE • TO66 PACKAGE

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

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POWER TRANSISTORS(1A,80V,25W)

NPN SILICON TRANSISTORS ... designed for driver circuits, switching and amplifier applications. FEATURES * Low Collector-Emitter Saturation Voltage VCE(sat)=0.6 V (Max.) @ Ic = 1.0 A * Excellent Safe Operating Area * Gain Specified to Ic = 1.0 Amp. * Complement to PNP 2N499.

Power Transistors

Power Transistors TO-66 Case

Power Transistors

Power Transistors

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation • Complement to Type 2N4900 APPLICATIONS • Designed for driver circuits, switching and amplifier application

SILICON EPITAXIAL NPN TRANSISTOR

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