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2N4919晶体管资料

  • 2N4919别名:2N4919三极管、2N4919晶体管、2N4919晶体三极管

  • 2N4919生产厂家:美国摩托罗拉半导体公司_美国国民半导体公司_德国电

  • 2N4919制作材料:Si-PNP

  • 2N4919性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N4919封装形式:直插封装

  • 2N4919极限工作电压:60V

  • 2N4919最大电流允许值:1A

  • 2N4919最大工作频率:>3MHZ

  • 2N4919引脚数:3

  • 2N4919最大耗散功率:30W

  • 2N4919放大倍数

  • 2N4919图片代号:B-21

  • 2N4919vtest:60

  • 2N4919htest:3000100

  • 2N4919atest:1

  • 2N4919wtest:30

  • 2N4919代换 2N4919用什么型号代替:BD136,BD166,BD178,BD188,BD236,BD400,CD50B,

2N4919价格

参考价格:¥0.0000

型号:2N4919 品牌:Solid 备注:这里有2N4919多少钱,2026年最近7天走势,今日出价,今日竞价,2N4919批发/采购报价,2N4919行情走势销售排行榜,2N4919报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N4919

GENERAL.PURPOSE POWER TRANSISTORS

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

2N4919

Medium-Power Plastic PNP Silicon Transistors

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

2N4919

Medium-Power Plastic PNP

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

2N4919

PNP SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4918, 2N4919, and 2N4920 are Silicon PNP Expitaxial Base Power Transistors designed for Medium power amplifier and switching applications.

CENTRAL

2N4919

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

ISC

无锡固电

2N4919

MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS

. . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N4919

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

SAVANTIC

2N4919

Medium Power PNP Bipolar Power Transistor

The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications. • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp\n• Excellent Power Dissipation - PD = 30 W @ TC = 25°C\n• Excellent Safe Operating Area\n• Gain Specified to IC = 1.0 Amp\n• Complement to NPN 2N4921, 2N4922, 2N4923\n• Pb-Free Package is Available;

ONSEMI

安森美半导体

2N4919

Silicon PNP Power Transistors

文件:106.51 Kbytes Page:3 Pages

SAVANTIC

2N4919

Trans GP BJT PNP 60V 3A 3-Pin TO-225 Bulk

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N4919

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

CENTRAL

2N4919

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP 60V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2N4919

Medium-Power Plastic PNP Silicon Transistors

文件:120.83 Kbytes Page:6 Pages

ONSEMI

安森美半导体

2N4919

Medium-Power Plastic PNP Silicon Transistors

文件:203.99 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Medium-Power Plastic PNP

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

Medium-Power Plastic PNP

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP 60V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

文件:120.83 Kbytes Page:6 Pages

ONSEMI

安森美半导体

2N4919产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    0.6

  • IC Cont. (A):

    1

  • VCEO Min (V):

    60

  • VCBO (V):

    40

  • VEBO (V):

    5

  • VBE(sat) (V):

    1.3

  • VBE(on) (V):

    1.3

  • hFE Min:

    30

  • hFE Max:

    150

  • fT Min (MHz):

    3

  • PTM Max (W):

    30

  • Package Type:

    TO-225-3

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
onsemi(安森美)
25+
TO-225-3
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
ON
24+/25+
200
原装正品现货库存价优
ONSEMI
25+
TO-225
20000
原装
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON(安森美)
26+
NA
60000
只有原装 可配单
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON/安森美
2450+
8540
只做原装正品假一赔十为客户做到零风险!!
ONSEMI
21+
TO-225
7496
百域芯优势 实单必成 可开13点增值税

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