2N4919晶体管资料
2N4919别名:2N4919三极管、2N4919晶体管、2N4919晶体三极管
2N4919生产厂家:美国摩托罗拉半导体公司_美国国民半导体公司_德国电
2N4919制作材料:Si-PNP
2N4919性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2N4919封装形式:直插封装
2N4919极限工作电压:60V
2N4919最大电流允许值:1A
2N4919最大工作频率:>3MHZ
2N4919引脚数:3
2N4919最大耗散功率:30W
2N4919放大倍数:
2N4919图片代号:B-21
2N4919vtest:60
2N4919htest:3000100
- 2N4919atest:1
2N4919wtest:30
2N4919代换 2N4919用什么型号代替:BD136,BD166,BD178,BD188,BD236,BD400,CD50B,
2N4919价格
参考价格:¥0.0000
型号:2N4919 品牌:Solid 备注:这里有2N4919多少钱,2026年最近7天走势,今日出价,今日竞价,2N4919批发/采购报价,2N4919行情走势销售排行榜,2N4919报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N4919 | GENERAL.PURPOSE POWER TRANSISTORS These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | ||
2N4919 | Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | ||
2N4919 | Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | ||
2N4919 | PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4918, 2N4919, and 2N4920 are Silicon PNP Expitaxial Base Power Transistors designed for Medium power amplifier and switching applications. | CENTRAL | ||
2N4919 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | ISC 无锡固电 | ||
2N4919 | MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N4919 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | SAVANTIC | ||
2N4919 | Medium Power PNP Bipolar Power Transistor The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications. • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp\n• Excellent Power Dissipation - PD = 30 W @ TC = 25°C\n• Excellent Safe Operating Area\n• Gain Specified to IC = 1.0 Amp\n• Complement to NPN 2N4921, 2N4922, 2N4923\n• Pb-Free Package is Available; | ONSEMI 安森美半导体 | ||
2N4919 | Silicon PNP Power Transistors 文件:106.51 Kbytes Page:3 Pages | SAVANTIC | ||
2N4919 | Trans GP BJT PNP 60V 3A 3-Pin TO-225 Bulk | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N4919 | Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | CENTRAL | ||
2N4919 | 封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP 60V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
2N4919 | Medium-Power Plastic PNP Silicon Transistors 文件:120.83 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
2N4919 | Medium-Power Plastic PNP Silicon Transistors 文件:203.99 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | |||
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | |||
Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | |||
封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP 60V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Medium-Power Plastic PNP Silicon Transistors 文件:120.83 Kbytes Page:6 Pages | ONSEMI 安森美半导体 |
2N4919产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Polarity:
PNP
- Type:
General Purpose
- VCE(sat) Max (V):
0.6
- IC Cont. (A):
1
- VCEO Min (V):
60
- VCBO (V):
40
- VEBO (V):
5
- VBE(sat) (V):
1.3
- VBE(on) (V):
1.3
- hFE Min:
30
- hFE Max:
150
- fT Min (MHz):
3
- PTM Max (W):
30
- Package Type:
TO-225-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-225 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi(安森美) |
25+ |
TO-225-3 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ON |
24+/25+ |
200 |
原装正品现货库存价优 |
||||
ONSEMI |
25+ |
TO-225 |
20000 |
原装 |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON/安森美 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
ONSEMI |
21+ |
TO-225 |
7496 |
百域芯优势 实单必成 可开13点增值税 |
2N4919规格书下载地址
2N4919参数引脚图相关
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2N4919数据表相关新闻
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DdatasheetPDF页码索引
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