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2N4919晶体管资料
2N4919别名：2N4919三极管、2N4919晶体管、2N4919晶体三极管
2N4919生产厂家：美国摩托罗拉半导体公司_美国国民半导体公司_德国电
2N4919制作材料：Si-PNP
2N4919性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N4919封装形式：直插封装
2N4919极限工作电压：60V
2N4919最大电流允许值：1A
2N4919最大工作频率：>3MHZ
2N4919引脚数：3
2N4919最大耗散功率：30W
2N4919放大倍数：
2N4919图片代号：B-21
2N4919vtest：60
2N4919htest：3000100
- 2N4919atest：1
2N4919wtest：30
2N4919代换 2N4919用什么型号代替：BD136,BD166,BD178,BD188,BD236,BD400,CD50B,
2N4919价格
参考价格：￥0.0000
型号：2N4919 品牌：Solid 备注：这里有2N4919多少钱，2025年最近7天走势，今日出价，今日竞价，2N4919批发/采购报价，2N4919行情走势销售排行榜，2N4919报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N4919 | GENERAL.PURPOSE POWER TRANSISTORS These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 |   | |
2N4919 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | ISC 无锡固电 | | |
2N4919 | Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications | SAVANTIC | | |
2N4919 | Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | |
2N4919 | PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4918, 2N4919, and 2N4920 are Silicon PNP Expitaxial Base Power Transistors designed for Medium power amplifier and switching applications. | Central | | |
2N4919 | MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N4919 | Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | |
2N4919 | 封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 60V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
2N4919 | Silicon PNP Power Transistors 文件：106.51 Kbytes Page：3 Pages | SAVANTIC | | |
2N4919 | Medium-Power Plastic PNP Silicon Transistors 文件：203.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
2N4919 | Medium-Power Plastic PNP Silicon Transistors 文件：120.83 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 60V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Medium-Power Plastic PNP Silicon Transistors 文件：120.83 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
2N4919产品属性
- 类型
描述
- 型号
2N4919
- 功能描述
两极晶体管 - BJT 3A 60V 30W PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-225 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ON |
24+/25+ |
200 |
原装正品现货库存价优 |
||||
ON |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ON/安森美 |
1609 |
TO-225 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
2N4919 |
19 |
19 |
|||||
ON |
23+ |
原厂原封 |
1500 |
订货1周 原装正品 |
|||
ONSEMI |
21+ |
TO-225 |
7496 |
百域芯优势 实单必成 可开13点增值税 |
2N4919芯片相关品牌
2N4919规格书下载地址
2N4919参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
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- 4536
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- 3g汽车
- 3579
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- 2N4928
- 2N4927
- 2N4926
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- 2N4925
- 2N4924(S)
- 2N4924
- 2N4923G
- 2N4923
- 2N4922G
- 2N4922
- 2N4921G
- 2N4921
- 2N4920G
- 2N4920
- 2N492(A)
- 2N492
- 2N491B
- 2N491A
- 2N4919G
- 2N4918G
- 2N4918
- 2N4917
- 2N4916
- 2N4915
- 2N4914
- 2N4913
- 2N4912X
- 2N4912
- 2N4911X
- 2N4911
- 2N4910X
- 2N4910
- 2N491(A)
- 2N491
- 2N490C
- 2N490B
- 2N490A
- 2N4909
- 2N4908
- 2N4907
- 2N4906
- 2N4905
- 2N4904
- 2N4903
- 2N4902
- 2N4901
- 2N4900
2N4919数据表相关新闻
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