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NTH价格
参考价格:¥79.8761
型号:NTH 品牌:Weller 备注:这里有NTH多少钱,2024年最近7天走势,今日出价,今日竞价,NTH批发/采购报价,NTH行情走势销售排行榜,NTH报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NTH | Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | ||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Isolated 2W Dual Output SM DC-DC Converters DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet | CANDD C&D Technologies | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200V, M3S, TO-247-4L Features Typ.RDS(on)=13m@VGS=18V UltraLowGateCharge(QG(tot)=254nC) HighSpeedSwitchingwithLowCapacitance(Coss=262pF) 100AvalancheTested ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L Features •Typ.RDS(on)=14m@VGS=18V •LowSwitchingLosses(Typ.EON1308Jat74A,800V) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •UPS(UninterruptiblePowerSupplies) •EnergySto | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L Features •Typ.RDS(on)=20m@VGS=15V Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide SiC MOSFET - 19 mohm, 650 V, M2, TO-247-4L Features •Typ.RDS(on)=19m@VGS=18V Typ.RDS(on)=25m@VGS=15V •UltraLowGateCharge(QG(tot)=164nC) •LowCapacitance(Coss=278pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm Features •Typ.RDS(on)=28m@VGS=20V •UltraLowGateCharge(QG(tot)=200nC) •HighSpeedSwitchingwithLowCapacitance(Coss=200pF) •100AvalancheTested •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •UPS •DC/DCConverter •BoostConverter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiC N-Channel MOSFET FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=40mΩ(TYP.)@VGS=20VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=29m@VGS=18V •UltraLowGateCharge(QG(tot)=107nC) •HighSpeedSwitchingwithLowCapacitance(Coss=106pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typica | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typica | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide SiC MOSFET - 33 mohm, 650V, M2, TO-247-4L Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide SiC MOSFET - 44 mohm, 650 V, M2, TO-247-4L Features •Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V •UltraLowGateCharge(QG(tot)=74nC) •LowCapacitance(Coss=133pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide SiC MOSFET - 60 mohm, 900V, M2, TO-247-4L Features •Typ.RDS(on)=60m@VGS=15V Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondle | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=65m@VGS=18V •UltraLowGateCharge(QG(tot)=57nC) •HighSpeedSwitchingwithLowCapacitance(Coss=57pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalA | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide SiC MOSFET - 57 mohm, 650 V, M2, TO-247-4L Features •Typ.RDS(on)=57m@VGS=18V Typ.RDS(on)=75m@VGS=15V •UltraLowGateCharge(QG(tot)=61nC) •LowOutputCapacitance(Coss=107pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondle | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247-4L 600 V, 61 m, 41 A Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features 650V@TJ=150C/Typ.RDS(on)=48.8m 100AvalancheTested Pb−Free,HalogenFree/BFRFreeandRoHSCompliant Applic | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsec | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247 600 V, 17 m, 75 A Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features •650V@TJ=150°C/Typ.RDS(on)=14.3m •100AvalancheTested •Pb−Free,HalogenFree/BFRFreeandRoHSCompliant Applic | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(TYP)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·ServerPowerSupplies ·IndustrialPowerSupplies | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
NTH产品属性
- 类型
描述
- 型号
NTH
- 功能描述
烙铁 Weller Chisel Tip For WMP Solder Penc
- RoHS
否
- 制造商
Weller
- 产品
Soldering Stations
- 类型
Digital, Iron, Stand, Cleaner
- 瓦特
50 W
- 最大温度
+ 850 F
- 电缆类型
US Cord Included
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
20+ |
SSOP-8 |
2960 |
诚信交易大量库存现货 |
|||
VISHAY/威世 |
21+ |
0805 |
8800 |
公司只做原装正品 |
|||
MURATA |
2016+ |
SMD |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ONS |
23+ |
N/A |
2000 |
只做原装,可直接咨询 |
|||
MURATA |
2018+ |
SMD |
6000 |
全新原装正品现货,假一赔佰 |
|||
ON |
12+ |
1206-8 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
22+ |
SMD06036.8KOhm5 |
100000 |
代理渠道/只做原装/可含税 |
|||
C&D |
23+ |
SMD12 |
18000 |
||||
ON |
23+ |
1206-8 |
20000 |
原厂原装正品现货 |
|||
ON/安森美 |
24+ |
SOT23-8 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
NTH规格书下载地址
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NTH数据表相关新闻
NTJD4158CT1G
NTJD4158CT1G
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NTHD4502NT1G
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2019-9-12NTD5865NLT4G公司原装正品现货
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2019-8-8
DdatasheetPDF页码索引
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