位置：首页 > IC中文资料 > NTH4L040N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTH4L040N120SC1 | SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTH4L040N120SC1 | SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typica | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
NTH4L040N120SC1 | MOSFET??SiCPower,SingleN-Channel,TO247-4L1200V,40m,58A 文件：282.35 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typica | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET-SiCPower,SingleN-Channel,TO247-4L1200V,40m,58A 文件：282.55 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
21+ |
N/A |
40 |
深圳通 |
|||
ON/安森美 |
2130+ |
TO-247 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
onsemi |
22+/23+ |
TO-247-4L |
9800 |
原装进口公司现货假一赔百 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi |
23+ |
TO-247-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
ON(安森美) |
标准封装 |
8000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ON/安森美 |
2023+ |
TO-247 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
onsemi |
24+ |
TO-247-4L |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON/安森美 |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
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NTH4L040N120SC1规格书下载地址
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DdatasheetPDF页码索引
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