位置：首页 > IC中文资料 > NTH4L160N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTH4L160N120SC1 | SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTH4L160N120SC1 | SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
NTH4L160N120SC1 | MOSFET??SiCPower,SingleN-Channel,TO247-4L1200V,160m,17.3A 文件：277.86 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,160mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,TO-247-4L Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondleve | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET-SiCPower,SingleN-Channel,TO247-4L1200V,160m,17.3A 文件：277.94 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
22+/23+ |
TO-247-4 |
9800 |
原装进口公司现货假一赔百 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi |
23+ |
TO-247-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
onsemi |
24+ |
TO-247-4L |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON2 |
23+ |
原厂原封 |
450 |
订货1周 原装正品 |
|||
ON-安森美 |
24+25+/26+27+ |
TO-247-4 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
onsemi |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
|||
ONSEMI |
21+ |
9455 |
原装正品优势现货! |
||||
ON |
22+ |
TO-247 |
12800 |
本公司只做进口原装!优势低价出售! |
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DdatasheetPDF页码索引
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