型号 功能描述 生产厂家&企业 LOGO 操作
NTH4L040N120M3S

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M3S,TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120M3S

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M3S,TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120M3S

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M3S,TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(ons

ONSEMION Semiconductor

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ONSEMI

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M3S,TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(ons

ONSEMION Semiconductor

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ONSEMI
更新时间:2024-5-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
23+
TO2474
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ONSEMI
23+
N/A
40
深圳通
ON/安森美
2130+
TO-247
9000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
21+
NA
3000
进口原装 假一罚十 现货
onsemi
23+
TO-247-4L
1356
原厂正品现货SiC MOSFET全系列
ON(安森美)
标准封装
8000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
ON/安森美
2023+
TO-247
8800
正品渠道现货 终端可提供BOM表配单。
ON/安森美
589220
16余年资质 绝对原盒原盘 更多数量
ON(安森美)
23+
NA
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON-安森美
24+25+/26+27+
TO-247-4
2368
一一有问必回一特殊渠道一有长期订货一备货HK仓库

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