N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.005 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR ■ ULTRA HIGH DENSITY TECHNOLOGY ■ TYPICAL RDS(on)=7 mΩ ■ AVALANCHE RUGGED TECHNOLOGY ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ SYNCROUNOUS RECTIFIERS ■ HIGH CURRENT, HIG

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 80A@ TC=25℃ Drain Source Voltage -VDSS= 50V(Min) Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 8.5 mΩ ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CU

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 61A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.023Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting

N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MO

N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a TO-220 package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED Lighting Description This very high voltage N-channel Power MO

Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a TO-220 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • Designed for automotive applications and AEC-Q101 quali

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS=68V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=96A@ TC=25℃ ·Drain Source Voltage -VDSS=68V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 30V - 0.004 - 80A TO-220 STripFET II MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=70A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D짼PAK STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Co

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.018Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D짼PAK STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Co

N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

Isc N-Channel MOSFET Transistor

• FEATURES • Typical RDS(on)=0.005Ω • Excellent switching performance • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Solenoid and relay drivers • DC-DC converters • Automotive environment

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D²PAK and TO-220 packages

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically

N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 68 V, 0.0082 廓, 98 A, TO-220 STripFET??II Power MOSFET

Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Features ■ Excep

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 98A@ TC=25℃ ·Drain Source Voltage -VDSS= 68V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest

N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-Channel 60 V (D-S) MOSFET

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