N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.005Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTED

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODE”ULTRAHIGHDENSITY”POWERMOSTRANSISTOR ■ULTRAHIGHDENSITYTECHNOLOGY ■TYPICALRDS(on)=7mΩ ■AVALANCHERUGGEDTECHNOLOGY ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■SYNCROUNOUSRECTIFIERS ■HIGHCURRENT,HIG

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR ■TYPICALRDS(on)=8.5mΩ ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCU

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. •Extremelylowgatecharge •Ultralowon-resistance •Lowgateinputresistance A

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDlighting

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDlighting

N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDlighting Description ThisveryhighvoltageN-channelPowerMO

N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a TO-220 package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDLighting Description ThisveryhighvoltageN-channelPowerMO

Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a TO-220 package

Description ThisdeviceisanN-channelPowerMOSFET developedusingthe6thgenerationofSTripFET™ DeepGATE™technology,withanewgate structure.TheresultingPowerMOSFETexhibits thelowestRDS(on)inallpackages. Features •Designedforautomotiveapplicationsand AEC-Q101quali

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkable

N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

N-CHANNEL 30V - 0.004 - 80A TO-220 STripFET II MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemark

N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem

N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersfortelecomandcomputerapp

N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersfortelecomandcomputerapp

N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersfortelecomandcomputerapp

N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersfortelecomandcomputerapp

N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFETprocesshas specificallybeendesignedtominimizeinput capacitanceandgatecharge.Itistherefore suitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecom andComputer

N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D짼PAK STripFET??II POWER MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersforTelecomandCo

N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D짼PAK STripFET??II POWER MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersforTelecomandCo

N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

Isc N-Channel MOSFET Transistor

•FEATURES •TypicalRDS(on)=0.005Ω •Excellentswitchingperformance •Easytodrive •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Solenoidandrelaydrivers •DC-DCconverters •Automotiveenvironment

N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema

N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema

Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D²PAK and TO-220 packages

Features •Designedforautomotiveapplicationsand AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecifically

N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

N-channel 68 V, 0.0082 廓, 98 A, TO-220 STripFET??II Power MOSFET

Description TheSTP80NF70isaN-channelPowerMOSFETrealizedwithSTMicroelectronicsuniqueSTripFET™process.Ithasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Thedeviceisthereforesuitableinadvancedhigh-efficiencyswitchingapplications. Features ■Excep

N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION ThisfullyclampedMosfetisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout. Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION ThisfullyclampedMosfetisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout. Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

N-Channel 60 V (D-S) MOSFET

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Isc N-Channel MOSFET Transistor

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N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK

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N-channel 800 V, 197 m廓 typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

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N-Channel MOSFET uses advanced trench technology

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N-channel 68 V, 8.2 m廓 typ., 85 A STripFET??DeepGATE?? Power MOSFET in TO-220 package

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N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package

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N-CHANNEL 30V - 0.0035 W - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

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