isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a TO-220 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • Designed for automotive applications and AEC-Q101 quali

Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.\n • Designed for automotive applications and AEC-Q101 qualified\n• Low gate charge• Very low on-resistance\n• High avalanche ruggedness;

N-Channel MOSFET uses advanced trench technology

文件：973.99 Kbytes Page：4 Pages

N-Channel MOSFET uses advanced SGT technology

文件：1.08523 Mbytes Page：4 Pages

丝印代码：80N6F6；Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a DPAK package

文件：676.88 Kbytes Page：15 Pages

N-Channel 60 V (D-S) 175 째C MOSFET

文件：998.79 Kbytes Page：8 Pages