型号 功能描述 生产厂家 企业 LOGO 操作
STP80N06-10

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 8.5 mΩ ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CU

STMICROELECTRONICS

意法半导体

STP80N06-10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP80N06-10

N-Channel 60 V (D-S) MOSFET

文件:998.19 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP80N06-10产品属性

  • 类型

    描述

  • 型号

    STP80N06-10

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

更新时间:2026-3-1 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
21+
TO-220-3
8860
只做原装,质量保证
ST/进口原
17+
TO-220
6200
24+
TO-220-3
8866
ST/意法半导体
23+
TO-220-3
16900
公司只做原装,可来电咨询
ST/意法半导体
22+
TO-220-3
20000
原装 品质保证
ST
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法半导体
24+
TO-220-3
16960
原装正品现货支持实单
ST
24+
TO-220
15000
原装现货热卖
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
ST/意法半导体
2020+
TO-220-3
7600
只做原装正品,卖元器件不赚钱交个朋友

STP80N06-10数据表相关新闻