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STP80NF10价格
参考价格：￥4.6776
型号：STP80NF10 品牌：STMicroelectronics 备注：这里有STP80NF10多少钱，2025年最近7天走势，今日出价，今日竞价，STP80NF10批发/采购报价，STP80NF10行情走势销售排行榜，STP80NF10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP80NF10 | N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 |   | |
STP80NF10 | N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | |
STP80NF10 | N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | |
STP80NF10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP80NF10 | N沟道100V - 0.012Ohm - 80A - TO-220低栅极电荷STripFET(TM) MOSFET | STMICROELECTRONICS 意法半导体 | | |
STP80NF10 | N-Channel 100-V (D-S) 175 째C MOSFET 文件：976.21 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
STP80NF10 | N-Channel MOSFET uses advanced trench technology 文件：1.51884 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | ||
N沟道100V - 0.012Ohm - 80A - TO-220FP低栅极电荷STripFET(TM)功率MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：968.93 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | ||
N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | ||
N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | ||
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer | STMICROELECTRONICS 意法半导体 | | ||
Military Grade 80 Series MIL-R-26 Qualified 文件：150.15 Kbytes Page：1 Pages | OHMITE | |
STP80NF10产品属性
- 类型
描述
- 型号
STP80NF10
- 功能描述
MOSFET N-Ch 100 Volt 80 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO220 |
5000 |
全新原装现货/价格优势可谈 |
|||
TI |
23+ |
SOT23 |
1000 |
全新原装假一赔十 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
25+23+ |
TO-220 |
15632 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
TO-220 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST/意法 |
2025+ |
TO-220FP-3 |
1200 |
原装进口价格优 请找坤融电子! |
|||
ST |
2015+ |
TO220A |
12500 |
全新原装,现货库存长期供应 |
|||
ST/意法 |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
|||
ST(意法半导体) |
2447 |
TO-220(TO-220-3) |
105000 |
50片/管一级代理专营品牌!原装正品,优势现货,长期 |
STP80NF10规格书下载地址
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STP80NF10数据表相关新闻
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