STP80NF10价格
参考价格：￥4.6776
型号：STP80NF10 品牌：STMicroelectronics 备注：这里有STP80NF10多少钱，2026年最近7天走势，今日出价，今日竞价，STP80NF10批发/采购报价，STP80NF10行情走势销售排行榜，STP80NF10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP80NF10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP80NF10 | N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | |
STP80NF10 | N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | |
STP80NF10 | N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | |
STP80NF10 | N沟道100V - 0.012Ohm - 80A - TO-220低栅极电荷STripFET(TM) MOSFET This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% Avalanche tested; | STMICROELECTRONICS 意法半导体 | | |
STP80NF10 | N-Channel 100-V (D-S) 175 째C MOSFET 文件：976.21 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
STP80NF10 | N-Channel MOSFET uses advanced trench technology 文件：1.51884 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
N沟道100V - 0.012Ohm - 80A - TO-220FP低栅极电荷STripFET(TM)功率MOSFET This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% Avalanche tested; | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：P80NF10FP；N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：968.93 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET??POWER MOSFET DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer app | STMICROELECTRONICS 意法半导体 | |
STP80NF10产品属性
- 类型
描述
- Package：
TO-220AB
- Grade：
Industrial
- VDSS(V)：
100
- RDS(on)_max(@ VGS=10V)(Ω)：
0.015
- Drain Current (Dc)_max(A)：
80
- PTOT_max(W)：
300
- Qg_typ(nC)：
140
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
26+ |
QFP |
99680 |
只做原装,欢迎来电资询 |
|||
ST |
26+ |
TO220 |
5000 |
全新原装现货/价格优势可谈 |
|||
ST(意法) |
25+ |
TO-220(TO-220-3) |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
SAMSUNG/三星 |
26+ |
QFP |
20000 |
公司只有正品,实单来谈 |
|||
ST(意法) |
25+ |
TO-220(TO-220-3) |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
SAMSUNG/三星 |
22+ |
QFP-256 |
3000 |
原装正品,支持实单 |
|||
ST/意法 |
2025+ |
TO-220FP-3 |
1200 |
原装进口价格优 请找坤融电子! |
|||
SAMSUNG |
24+ |
QFP |
153 |
||||
HPMASKING |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
1907+ |
TO220 |
1008 |
原装现货 价格优势 |
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DdatasheetPDF页码索引
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