N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 8.5 mΩ

■ AVALANCHE RUGGED TECHNOLOGY

■ 100 AVALANCE TESTED

■ HIGH CURRENT CAPABILITY

■ 175°C OPERATING TEMPERATURE

■ HIGH dV/dt RUGGEDNESS

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ PWM MOTOR CONTROL

■ DC-DC & DC-AC CONVERTER

■ SYNCROUNOUS RECTIFICATION