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STP4N价格
参考价格:¥20.1559
型号:STP4N150 品牌:STMicroelectronics 备注:这里有STP4N多少钱,2024年最近7天走势,今日出价,今日竞价,STP4N批发/采购报价,STP4N行情走势销售排行榜,STP4N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEED | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEED | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET Description UsingthewellconsolidatedhighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofveryhighvoltagePowerMOSFETswithoutstandingperformances. Thestrengthenedlayoutcoupledwiththecompany’sproprietaryedgeterminationstructure,givesth | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR N-CHANNEL200V-1.3Ω-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptmizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptmizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.1Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHCURRE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.1Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHCURRE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh??MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh??MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswitchingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswitchingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.4W - 3A TO-220/TO-220FP/DPAK/IPAK DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET Description ThefastSuperMESH™seriesassociatesalladvantagesofreducedon-resistance,zenergateprotectionandoutstandingdc/dtcapabilitywithaFastbody-drainrecoverydiode.SuchseriescomplementstheFDmesh™advancedtecnology. ■100avalanchetested ■Extremelyhighdv/dtcapabili | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 500V - 2.4W - 3A TO-220/TO-220FP/DPAK/IPAK DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics. ■TYPICAL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics. ■TYPICAL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF 文件:459.62 Kbytes Page:16 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET 文件:365.47 Kbytes Page:14 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF 文件:762.25 Kbytes Page:15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET 文件:365.47 Kbytes Page:14 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 文件:323.74 Kbytes Page:7 Pages | SipexSipex Corporation 西伯斯|迈凌西伯斯公司 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 文件:323.74 Kbytes Page:7 Pages | SipexSipex Corporation 西伯斯|迈凌西伯斯公司 | |||
N-Channel 650 V (D-S) MOSFET 文件:1.09038 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel 650 V (D-S) MOSFET 文件:1.09031 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
STP4N产品属性
- 类型
描述
- 型号
STP4N
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
19+ |
6500 |
进口原装现货 |
||||
ST/意法 |
23+ |
NA/ |
3265 |
原厂直销,现货供应,账期支持! |
|||
ST全系列 |
22+23+ |
TO-220F |
26513 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ST |
TO-220F |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/意法 |
TO-220F |
265209 |
假一罚十,原包原标签,常备现货 |
||||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ST |
23+ |
TO-220F |
8795 |
||||
ST |
N/A |
2510 |
|||||
ST |
17+ |
TO-220F |
6200 |
STP4N规格书下载地址
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STP4N数据表相关新闻
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进口代理
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STP65NF06原装现货供应0755-2889238913713856319QQ:2639752116
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STP413D,全新原装现货0755-82732291当天发货或门市自取.
2020-12-19STP45N10,STP45N10FI,STP45NE06,STP45NE06FP,STP45NE06L
STP45N10,STP45N10FI,STP45NE06,STP45NE06FP,STP45NE06L
2020-3-12
DdatasheetPDF页码索引
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