N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道525 V、2.1 Ohm典型值、2.5 A SuperMESH3(TM) 功率MOSFET，TO-220封装

N-Channel 650 V (D-S) MOSFET

文件：1.09038 Mbytes Page：9 Pages

N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650 V (D-S) MOSFET

文件：1.08666 Mbytes Page：9 Pages

Power MOSFET

文件：1.07814 Mbytes Page：9 Pages