型号 功能描述 生产厂家&企业 LOGO 操作
STP4NB50

N-CHANNEL500V-2.5ohm-3.8A-TO-220/TO-220FPPowerMesh??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
STP4NB50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
STP4NB50

N-Channel650V(D-S)MOSFET

文件:1.09031 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNEL500V-2.5ohm-3.8A-TO-220/TO-220FPPowerMesh??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL500V-2.5ohm-3.8A-TO-220/TO-220FPPowerMesh??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL500V-2.5ohm-3.8A-D2PAK/I2PAKPowerMESHOMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

STP4NB50产品属性

  • 类型

    描述

  • 型号

    STP4NB50

  • 功能描述

    MOSFET RO 511-STP4NK50Z

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-2 18:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
0148+
TO-220
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
23+
TO-220
8795
ST
2511
TO-220
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
23+
TO-220
10000
专做原装正品,假一罚百!
ST/意法
24+
TO-220F
7800
全新原厂原装正品现货,低价出售,实单可谈
ST
24+
TOP-220FP
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
24+
N/A
3610
ST/进口原
17+
TO-220
6200
ST
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
22+
N
28000
原装现货只有原装.假一罚十

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