位置：首页 > IC中文资料第537页 > STP4NB50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP4NB50 | N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 |   | |
STP4NB50 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP4NB50 | N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET | STMICROELECTRONICS 意法半导体 | | |
STP4NB50 | N-Channel 650 V (D-S) MOSFET 文件：1.09031 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |
STP4NB50产品属性
- 类型
描述
- 型号
STP4NB50
- 功能描述
MOSFET RO 511-STP4NK50Z
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TOP-220FP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST/进口原 |
17+ |
TO-220F |
6200 |
||||
ST |
23+ |
TO-220F |
16900 |
正规渠道,只有原装! |
|||
ST |
24+ |
N/A |
3610 |
||||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
ST |
26+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST |
24+ |
TO-220F |
2500 |
原装现货热卖 |
|||
ST |
05+ |
原厂原装 |
151 |
只做全新原装真实现货供应 |
|||
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
STP4NB50规格书下载地址
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DdatasheetPDF页码索引
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