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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP4NB80 | N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 |   | |
STP4NB80 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Power MOSFET 文件：2.12158 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | |
STP4NB80产品属性
- 类型
描述
- 型号
STP4NB80
- 功能描述
MOSFET RO 512-FQP4N80 3/05
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+24 |
TO-220 |
17437 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
ST |
23+ |
TO-220F |
16900 |
正规渠道,只有原装! |
|||
ST |
25+ |
TO-220 |
12858 |
只做原装进口!正品支持实单! |
|||
ST |
24+ |
TO-220 |
71 |
||||
ST |
16+ |
TO-220 |
10000 |
全新原装现货 |
|||
ST/意法 |
24+ |
NA/ |
16449 |
原厂直销,现货供应,账期支持! |
|||
ST |
2511 |
TO-220F |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
24+ |
6000 |
原装现货,特价销售 |
STP4NB80规格书下载地址
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DdatasheetPDF页码索引
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