位置：首页 > IC中文资料第1193页 > STP4NB80
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP4NB80 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP4NB80 | N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | |
STP4NB80 | N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
Power MOSFET 文件：2.12158 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | |
STP4NB80产品属性
- 类型
描述
- 型号
STP4NB80
- 功能描述
MOSFET RO 512-FQP4N80 3/05
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-220FP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
ST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ST/意法 |
25+ |
TO220F |
20300 |
ST/意法原装特价STP4NB80FP即刻询购立享优惠#长期有货 |
|||
ST/意法 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
|||
ST |
17+ |
TO-220F |
6200 |
||||
ST |
25+ |
SOT-23-5 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST |
24+ |
TO-220 |
71 |
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STP4NB80规格书下载地址
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DdatasheetPDF页码索引
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