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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP4NA40 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP4NA40 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o | STMICROELECTRONICS 意法半导体 | | |
STP4NA40 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.8A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1) ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半导体 | |
STP4NA40产品属性
- 类型
描述
- 型号
STP4NA40
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
26+ |
QFP |
20000 |
公司只有正品,实单来谈 |
|||
ST全系列 |
25+23+ |
TO-220F |
26191 |
绝对原装正品全新进口深圳现货 |
|||
ST |
26+ |
TO-220 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
SAMSUNG/三星 |
22+ |
QFP-256 |
3000 |
原装正品,支持实单 |
|||
SAMSUNG/三星 |
26+ |
QFP |
99680 |
只做原装,欢迎来电资询 |
|||
ST |
17+ |
TO-220F |
6200 |
||||
ST |
26+ |
TO-220F |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST |
24+ |
TO220FP |
2994 |
||||
ST |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
24+ |
TO-220F |
2500 |
原装现货热卖 |
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STP4NA40规格书下载地址
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DdatasheetPDF页码索引
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