型号 功能描述 生产厂家&企业 LOGO 操作
STP4NA90

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 3.1 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRE

STMICROELECTRONICS

意法半导体

STP4NA90

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.2A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 3.1 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRE

STMICROELECTRONICS

意法半导体

900V N-Channel MOSFET

文件:447.07 Kbytes Page:8 Pages

PANJIT

強茂

900V N-Channel MOSFET

文件:447.07 Kbytes Page:8 Pages

PANJIT

強茂

900V N-Channel MOSFET

文件:447.07 Kbytes Page:8 Pages

PANJIT

強茂

900V N-Channel MOSFET

文件:447.07 Kbytes Page:8 Pages

PANJIT

強茂

更新时间:2025-8-14 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
9250
原厂直销,现货供应,账期支持!
ST
19+
TO-220
1900
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST
24+
TO-220
2500
原装现货热卖
ST
23+
TO-220
10000
专做原装正品,假一罚百!
ST
23+
TO-220
8795
ST
22+
TO220ABNONISOL
25000
只做原装进口现货,专注配单
ST
24+
TO-220
27500
原装正品,价格最低!
ST
25+23+
TO-220
26187
绝对原装正品全新进口深圳现货
ST进口原装
23+
TO-220F
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

STP4NA90数据表相关新闻