型号 功能描述 生产厂家 企业 LOGO 操作
STP4NC50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP4NC50

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

STMICROELECTRONICS

意法半导体

STP4NC50

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2.

STMICROELECTRONICS

意法半导体

N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET

文件:85.95 Kbytes Page:8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 1.3??- 3.7A DPAK/IPAK PowerMesh?줚I MOSFET

文件:190.52 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

STP4NC50产品属性

  • 类型

    描述

  • 型号

    STP4NC50

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

更新时间:2025-10-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
200
优势代理渠道,原装正品,可全系列订货开增值税票
ST/意法
25+
TO-220
54648
百分百原装现货 实单必成
ST-MICROELECTRONICS
24+
NA
990000
明嘉莱只做原装正品现货
ST
06+
?TO-220
1000
全新原装 绝对有货
ST
25+
TO-220
16900
原装,请咨询
ST
NEW
TO-220
18689
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST-MICROE
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
ST
23+
TO-220
10000
专做原装正品,假一罚百!
ST
24+
TO-220
2500
原装现货热卖
ST
23+
TO-220
6290
原厂原装正品

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