位置:首页 > IC中文资料第5434页 > STP4NC50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| STP4NC50 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
| STP4NC50 | N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2 | STMICROELECTRONICS 意法半导体 | ||
| STP4NC50 | N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET | STMICROELECTRONICS 意法半导体 | ||
| N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2 | STMICROELECTRONICS 意法半导体 | |||
| isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
| N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2 | STMICROELECTRONICS 意法半导体 | |||
| N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2. | STMICROELECTRONICS 意法半导体 | |||
| N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET 文件:85.95 Kbytes Page:8 Pages | STMICROELECTRONICS 意法半导体 | |||
| N-CHANNEL 500V - 1.3??- 3.7A DPAK/IPAK PowerMesh?줚I MOSFET 文件:190.52 Kbytes Page:9 Pages | STMICROELECTRONICS 意法半导体 | 
STP4NC50产品属性
- 类型描述 
- 型号STP4NC50 
- 制造商STMICROELECTRONICS 
- 制造商全称STMicroelectronics 
- 功能描述N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| ST/意法 | 24+ | NA/ | 200 | 优势代理渠道,原装正品,可全系列订货开增值税票 | |||
| ST/意法 | 25+ | TO-220 | 54648 | 百分百原装现货 实单必成 | |||
| ST-MICROELECTRONICS | 24+ | NA | 990000 | 明嘉莱只做原装正品现货 | |||
| ST | 06+ | ?TO-220 | 1000 | 全新原装 绝对有货 | |||
| ST | 25+ | TO-220 | 16900 | 原装,请咨询 | |||
| ST | NEW | TO-220 | 18689 | 代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 | |||
| ST-MICROE | ROHS | 56520 | 一级代理 原装正品假一罚十价格优势长期供货 | ||||
| ST | 23+ | TO-220 | 10000 | 专做原装正品,假一罚百! | |||
| ST | 24+ | TO-220 | 2500 | 原装现货热卖 | |||
| ST | 23+ | TO-220 | 6290 | 原厂原装正品 | 
STP4NC50规格书下载地址
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