型号 功能描述 生产厂家 企业 LOGO 操作
STP4NC50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP4NC50

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

STMICROELECTRONICS

意法半导体

STP4NC50

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2.

STMICROELECTRONICS

意法半导体

N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET

文件:85.95 Kbytes Page:8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 1.3??- 3.7A DPAK/IPAK PowerMesh?줚I MOSFET

文件:190.52 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

STP4NC50产品属性

  • 类型

    描述

  • 型号

    STP4NC50

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

更新时间:2025-12-26 10:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2022+
TO-220
12888
原厂代理 终端免费提供样品
ST
24+
TO-220
2455
原装STM
24+
TO-220
63200
一级代理/放心采购
ST-MICROELECTRONICS
24+
NA
990000
明嘉莱只做原装正品现货
ST
NEW
TO-220
18689
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST/意法
25+
TO-220
54648
百分百原装现货 实单必成
NEXPERIA/安世
23+
SOT-323
69820
终端可以免费供样,支持BOM配单!
ST-MICROE
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
ST/意法
23+
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
24+
TO-220F
2500
原装现货热卖

STP4NC50数据表相关新闻