Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Exc

Automotive-grade trench gate field-stop IGBT M series, 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Low thermal resistance

文件：695.31 Kbytes Page：16 Pages

Low thermal resistance

文件：881.96 Kbytes Page：18 Pages

Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

文件：731.88 Kbytes Page：16 Pages

Low thermal resistance

文件：695.31 Kbytes Page：16 Pages