封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT TRENCH 650V 60A TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

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Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Exc

Low thermal resistance

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Low thermal resistance

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Low thermal resistance

文件：695.31 Kbytes Page：16 Pages