Features

• AEC-Q101 qualified

• Maximum junction temperature: TJ = 175 °C

• 6 μs of minimum short-circuit withstand time

• VCE(sat) = 1.6 V (typ.) @ IC = 30 A

• Tight parameter distribution

• Safer paralleling

• Low thermal resistance

• Soft and very fast-recovery antiparallel diode

• Excellent switching performance thanks to the extra driving kelvin pin

Applications

• Automotive motor control

• e-compressor

• Industrial motor control

• Power supplies and converters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.