Trench gate Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.0V@IC=30A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

Low thermal resistance

文件：695.31 Kbytes Page：16 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 650V 30A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

沟槽栅场截止IGBT，M系列，650 V、30 A，低损耗

Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Exc

Low thermal resistance

文件：695.31 Kbytes Page：16 Pages

Low thermal resistance

文件：881.96 Kbytes Page：18 Pages

Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

文件：731.88 Kbytes Page：16 Pages