STGD18N40LZ价格

参考价格:¥4.3834

型号:STGD18N40LZ-1 品牌:STMicroelectronics 备注:这里有STGD18N40LZ多少钱,2025年最近7天走势,今日出价,今日竞价,STGD18N40LZ批发/采购报价,STGD18N40LZ行情走势销售排行榜,STGD18N40LZ报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STGD18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

STMICROELECTRONICS

意法半导体

STGD18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

文件:636.58 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

STGD18N40LZ

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

STMICROELECTRONICS

意法半导体

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:管件 描述:IGBT 420V 25A 125W IPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

文件:636.58 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

文件:636.58 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 420V 25A 125W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

STMICROELECTRONICS

意法半导体

18A, 400V N-CHANNEL POWER MOSFET

文件:151.29 Kbytes Page:4 Pages

UTC

友顺

400V N-CHANNEL POWER MOSFET

文件:145.54 Kbytes Page:3 Pages

UTC

友顺

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

STGD18N40LZ产品属性

  • 类型

    描述

  • 型号

    STGD18N40LZ

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    EAS 180 mJ - 390 V - internally clamped IGBT

更新时间:2025-8-14 8:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
ST/意法半导体
25
DPAK-3
6000
原装正品
ST
21+
TO-252
550
原装现货假一赔十
ST/意法
22+
SOT-252
100000
代理渠道/只做原装/可含税
ST/意法半导体
22+
DPAK-3
6004
原装正品现货 可开增值税发票
ST
23+
TO-251
8560
受权代理!全新原装现货特价热卖!
ST/意法
25+
TO-252
54658
百分百原装现货 实单必成
STM
24+/25+
DPAK(TO-252)
5000
原装正品现货库存价优
ST
1410+
TO252
675
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
25+
TO-252
32360
ST/意法全新特价STGD18N40LZT4即刻询购立享优惠#长期有货

STGD18N40LZ数据表相关新闻