STGD18N40LZ价格

参考价格:¥4.3834

型号:STGD18N40LZ-1 品牌:STMicroelectronics 备注:这里有STGD18N40LZ多少钱,2025年最近7天走势,今日出价,今日竞价,STGD18N40LZ批发/采购报价,STGD18N40LZ行情走势销售排行榜,STGD18N40LZ报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STGD18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

STMICROELECTRONICS

意法半导体

STGD18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

文件:636.58 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

STGD18N40LZ

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

STGD18N40LZ

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

STMICROELECTRONICS

意法半导体

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

文件:636.58 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:管件 描述:IGBT 420V 25A 125W IPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

文件:636.58 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 420V 25A 125W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

STMICROELECTRONICS

意法半导体

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

STMICROELECTRONICS

意法半导体

18A, 400V N-CHANNEL POWER MOSFET

文件:151.29 Kbytes Page:4 Pages

UTC

友顺

400V N-CHANNEL POWER MOSFET

文件:145.54 Kbytes Page:3 Pages

UTC

友顺

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

STGD18N40LZ产品属性

  • 类型

    描述

  • 型号

    STGD18N40LZ

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    EAS 180 mJ - 390 V - internally clamped IGBT

更新时间:2025-11-22 13:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST全系列
25+23+
DPAKIPAK
26243
绝对原装正品全新进口深圳现货
ST
23+
TO-252
50000
全新原装正品现货,支持订货
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ST/意法
25+
TO-252
54658
百分百原装现货 实单必成
ST
24+
TO-252
5000
全新原装正品,现货销售
ST/意法半导体
2511
DPAK-3
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法半导体
24+
DPAK-3
16900
原厂原装,价格优势,欢迎洽谈!
ST/意法
2517+
TO252
8850
只做原装正品现货或订货假一赔十!
ST/意法
22+
TO-252
25800
原装正品支持实单
ST/意法半导体
24+
DPAK-3
6000
全新原装深圳仓库现货有单必成

STGD18N40LZ数据表相关新闻