型号 功能描述 生产厂家&企业 LOGO 操作
GB18N40LZ

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

STMICROELECTRONICS

意法半导体

400V N-CHANNEL POWER MOSFET

文件:145.54 Kbytes Page:3 Pages

UTC

友顺

18A, 400V N-CHANNEL POWER MOSFET

文件:151.29 Kbytes Page:4 Pages

UTC

友顺

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

更新时间:2025-8-6 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GOLDEN
24+
DIP6
880000
明嘉莱只做原装正品现货
GOLDEN
21+
DIP6
4000
ST
1926+
D2PAK
6852
只做原装正品现货!或订货假一赔十!
ST/意法
23+
D2PAK
26000
原厂授权一级代理,专业海外优势订货,价格优势、品种
GOLDEN继电器
25+23+
DIP6
20407
绝对原装正品全新进口深圳现货
ST
25+
TO-263
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
GOLDEN
22+
DIP6
26777
原装正品现货
DIP6
1000
原装长期供货!
GOLDEN
24+
DIP6
54000
郑重承诺只做原装进口现货
GOLDEN
24+
DIP6
9600
原装现货,优势供应,支持实单!

GB18N40LZ数据表相关新闻