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GB18N40LZ

EAS 180 mJ - 390 V - internally clamped IGBT

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STMICROELECTRONICS

意法半导体

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

STMICROELECTRONICS

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400V N-CHANNEL POWER MOSFET

文件:145.54 Kbytes Page:3 Pages

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友顺

18A, 400V N-CHANNEL POWER MOSFET

文件:151.29 Kbytes Page:4 Pages

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友顺

EAS 180 mJ - 390 V - internally clamped IGBT

文件:896 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

更新时间:2025-9-23 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GOLDEN
24+
DIP6
9600
原装现货,优势供应,支持实单!
ST/意法
23+
D2PAK
26000
原厂授权一级代理,专业海外优势订货,价格优势、品种
GOLDEN
21+
DIP6
4000
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
ST
23+
TO-263
30957
##公司主营品牌长期供应100%原装现货可含税提供技术
GOLDEN
2447
DIP6
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
23+
DIP6
7300
专注配单,只做原装进口现货
GOLDEN继电器
25+23+
DIP6
20407
绝对原装正品全新进口深圳现货
TRANSPOWER厚
24+
SOP-24
94
COEVINC
24+
SOP24
5000
全现原装公司现货

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