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STGD18N40LZT4价格
参考价格：￥4.4733
型号：STGD18N40LZT4 品牌：STMicroelectronics 备注：这里有STGD18N40LZT4多少钱，2025年最近7天走势，今日出价，今日竞价，STGD18N40LZT4批发/采购报价，STGD18N40LZT4行情走势销售排行榜，STGD18N40LZT4报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STGD18N40LZT4 | Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. | STMICROELECTRONICS 意法半导体 |   | |
STGD18N40LZT4 | EAS 180 mJ - 400 V - internally clamped IGBT Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 | | |
STGD18N40LZT4 | EAS 180 mJ - 390 V - internally clamped IGBT 文件：896 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | |
STGD18N40LZT4 | EAS 180 mJ - 400 V - internally clamped IGBT 文件：636.58 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | |
STGD18N40LZT4 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 420V 25A 125W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
EAS 180 mJ - 400 V - internally clamped IGBT Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. | STMICROELECTRONICS 意法半导体 | | ||
EAS 180 mJ - 390 V - internally clamped IGBT 文件：896 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
EAS 180 mJ - 400 V - internally clamped IGBT 文件：636.58 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | |
STGD18N40LZT4产品属性
- 类型
描述
- 型号
STGD18N40LZT4
- 功能描述
IGBT 晶体管 EAS 180 mJ-400 V clamped IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
DPAK |
7167 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST/意法 |
20+ |
TO-252 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
25+23+ |
TO252 |
74768 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST/意法 |
22+ |
TO-252 |
9000 |
原装正品,支持实单! |
|||
ST/意法半导体 |
21+ |
DPAK-3 |
8860 |
只做原装,质量保证 |
|||
ST |
24+ |
DPAK-3 |
10645 |
只做原装/假一赔十/安心咨询 |
|||
ST/意法 |
24+ |
TO-252 |
5000 |
只做原厂渠道 可追溯货源 |
|||
ST |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
ST |
23+ |
TO-252 |
25000 |
正规渠道,只有原装! |
|||
ST |
23+ |
TO-252 |
10000 |
原装正品,假一罚十 |
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STGD18N40LZT4规格书下载地址
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2020-12-1
DdatasheetPDF页码索引
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